Produkte > DMT
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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DMT-09-1-4B-NL | RDI Electronics | DMT-09-1-4B-NL | auf Bestellung 3998 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT-09-1-4B-NL | RDI Electronics | DMT-09-1-4B-NL | auf Bestellung 3998 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT-1-02 | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-02-GW | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-02-SG | Adam Technologies | 3MM LATCHING HSG FEMALE 1*2P BK RoHS 1Kpcs,bag | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-03 | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-04 | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-06 | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1-08 | Adam Technologies | CONNECTOR, WIRE HOUSING, 3.00MM | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1206S-NL | RDI Electronics | Audio Alert | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1606S-NL | RDI Electronics | Audio 4V 7V 30mA 6V 85dB Through Hole Pin | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT-1606S-NL | RDI Electronics | Audio 4V 7V 30mA 6V 85dB Through Hole Pin | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT-1612S-NL | RDI Electronics | AUDIO ALERT W/OSCILLATING CIRCUIT | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1A-02 | Adam Tech | Description: CONN RECEPT 2POS SINGLE 3.0MM | auf Bestellung 4994 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-1A-03 | Adam Tech | Description: CONN RECEPT 3POS SINGLE 3.0MM | auf Bestellung 4989 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-1A-04 | Adam Tech | Description: CONN RECEPT 4POS SINGLE 3.0MM | auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-1A-05 | Adam Technologies | Housing F 5 POS 3mm Pitch Crimp Straight Cable Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-1A-05 | Adam Tech | Description: CONN RCPT HSG 5POS 3.00MM Features: Glow Wire Compliant Packaging: Bag Connector Type: Receptacle Contact Termination: Crimp Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 5 Pitch: 0.118" (3.00mm) Contact Type: Female Socket Fastening Type: Latch Lock Part Status: Active Insulation Material: Polyamide (PA), Nylon Number of Rows: 1 | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-2-10-R-P-PCB | Adam Technologies | DMT-2-10-R-P-PCB | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-04 | Adam Tech | Description: CONN RCPT HSG 4POS 3.00MM Packaging: Bag Connector Type: Receptacle Contact Termination: Crimp Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Pitch: 0.118" (3.00mm) Operating Temperature: -25°C ~ 120°C Contact Type: Female Socket Fastening Type: Latch Lock Row Spacing: 0.118" (3.00mm) Insulation Material: Polyamide (PA66), Nylon 6/6 Number of Rows: 2 | auf Bestellung 5459 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-2A-04 | Adam Technologies | Connector Crimp Housing RCP 4Pos Dual 3.0mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-06 | Adam Tech | Description: CONN RCPT HSG 6POS 3.00MM Packaging: Bag Connector Type: Receptacle Contact Termination: Crimp Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 6 Pitch: 0.118" (3.00mm) Operating Temperature: -25°C ~ 120°C Contact Type: Female Socket Fastening Type: Latch Lock Row Spacing: 0.118" (3.00mm) Insulation Material: Polyamide (PA66), Nylon 6/6 Number of Rows: 2 | auf Bestellung 14051 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-2A-08 | Adam Tech | Description: CONN RECEPT 8POS DUAL 3.0MM | auf Bestellung 4859 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-2A-10 | Adam Tech | Description: CONN RECEPT 10POS DUAL 3.0MM | auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-2A-10 | Adam Technologies | Connector Crimp Housing RCP 10Pos Dual 3.0mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-12 | Adam Technologies | Connector Crimp Housing RCP 12Pos Dual 3.0mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-12 | Adam Tech | Description: CONN RECEPT 12POS DUAL 3.0MM | auf Bestellung 4976 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-2A-14 | Adam Technologies | Connector Crimp Housing RCP 14Pos Dual 3.0mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-14 | Adam Tech | Description: CONN RECEPT 14POS DUAL 3.0MM | auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-2A-16 | Adam Technologies | Connector Crimp Housing RCP 16Pos Dual 3.0mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-2A-16 | Adam Tech | Description: CONN RECEPT 16POS DUAL 3.0MM | auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-2A-24 | Adam Tech | Description: CONN RCPT HSG 24POS 3.00MM Packaging: Bag Connector Type: Receptacle Contact Termination: Crimp Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 24 Pitch: 0.118" (3.00mm) Operating Temperature: -25°C ~ 120°C Contact Type: Female Socket Fastening Type: Latch Lock Row Spacing: 0.118" (3.00mm) Insulation Material: Polyamide (PA66), Nylon 6/6 Number of Rows: 2 | auf Bestellung 2933 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-4CC | MONACOR | Description: MONACOR - DMT-4CC - Messzubehör, Koffer, Schwarz, Digital- und Analogmultimeter tariffCode: 42021299 productTraceability: No rohsCompliant: NA euEccn: NLR hazardous: false Aufbewahrung/Transport: Koffer rohsPhthalatesCompliant: TBA Gehäusefarbe: Schwarz Zur Verwendung mit: Digital- und Analogmultimeter usEccn: EAR99 Produktpalette: - SVHC: No SVHC (17-Dec-2014) | auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT-6-12 | Signal Transformer | Description: XFRMR LAMINATED 6VA CHAS MOUNT | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-6-12 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-6-15 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-6-15 | Signal Transformer | Description: PWR XFMR LAMINATED 6VA CHAS MT | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-7-12 | Signal Transformer | Description: PWR XFMR LAMINATED 7VA CHAS MT Packaging: Bulk Size / Dimension: 93.70mm L x 49.20mm W Mounting Type: Chassis Mount Type: Laminated Core Weight: 1.7 lbs (771.1 g) Termination Style: Solder, Quick Connect Primary Winding(s): Dual Secondary Winding(s): Dual Power - Max: 7VA Voltage - Isolation: 2500Vrms Current - Output (Max): 2.8A, 350mA Voltage - Primary: 115V, 230V Height - Seated (Max): 57.80mm Voltage - Secondary (Full Load): 5V, 12V Center Tap: Yes | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-7-12 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-7-15 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-7-15 | Signal Transformer | Description: PWR XFMR LAMINATED 7VA CHAS MT Packaging: Bulk Size / Dimension: 93.70mm L x 49.20mm W Mounting Type: Chassis Mount Type: Laminated Core Weight: 1.7 lbs (771.1 g) Termination Style: Solder, Quick Connect Primary Winding(s): Dual Secondary Winding(s): Dual Power - Max: 7VA Voltage - Isolation: 2500Vrms Current - Output (Max): 2.8A, 280mA Voltage - Primary: 115V, 230V Height - Seated (Max): 57.80mm Voltage - Secondary (Full Load): 5V, 15V Center Tap: Yes | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-8-12 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-8-12 | Signal Transformer | Description: PWR XFMR LAMINATED 8VA CHAS MT Packaging: Bulk Size / Dimension: 102.40mm L x 58.50mm W Mounting Type: Chassis Mount Type: Laminated Core Weight: 2.8 lbs (1.3 kg) Termination Style: Solder, Quick Connect Primary Winding(s): Dual Secondary Winding(s): Dual Power - Max: 8VA Voltage - Isolation: 2500Vrms Current - Output (Max): 4A, 600mA Voltage - Primary: 115V, 230V Height - Seated (Max): 67.70mm Voltage - Secondary (Full Load): 5V, 12V Center Tap: Yes | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-8-15 | Bel Signal Transformer | Power Transformers 5060 Hz, Laminated Transformer | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-8-15 | Signal Transformer | Description: PWR XFMR LAMINATED 8VA CHAS MT Packaging: Bulk Size / Dimension: 102.40mm L x 58.50mm W Mounting Type: Chassis Mount Type: Laminated Core Weight: 2.8 lbs (1.3 kg) Termination Style: Solder, Quick Connect Primary Winding(s): Dual Secondary Winding(s): Dual Power - Max: 8VA Voltage - Isolation: 2500Vrms Current - Output (Max): 4A, 500mA Voltage - Primary: 115V, 230V Height - Seated (Max): 67.70mm Voltage - Secondary (Full Load): 5V, 15V Center Tap: Yes | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-A-C-F-T-R | Adam Technologies | Conn Contact Stamped Crimp Contact 20-30 AWG | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-A5-C-F-T-R | Adam Technologies | Conn Contact Stamped Crimp Contact 20-30 AWG | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-B-C-F-T-R | Adam Technologies | Conn Contact Stamped Crimp Contact 20-30 AWG | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-B5-C-F-T-R | Adam Technologies | Conn Contact Stamped Crimp Contact 20-30 AWG | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-B5-C-F-T-R | Adam Tech | Description: CONTACT TIN 20-24 AWG | auf Bestellung 4859 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT-B5-C-F-T-R | Adam Tech | Description: CONTACT TIN 20-24 AWG | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT-D-1-02 | Adam Tech | Description: CONN RECEPT 2POS SINGLE 3.0MM | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-D-1-03 | Adam Tech | Description: CONN RECEPT 3POS SINGLE 3.0MM | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-D-1-04 | Adam Tech | Description: CONN RECEPT 4POS SINGLE 3.0MM | auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-D-1-05 | Adam Tech | Description: CONN RECEPT 5POS SINGLE 3.0MM | auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT-D-2-22-HF | Adam Technologies | 3MM LATCHING HSG 2*11P BK HF RoHS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1-16-6.7L | Coilcraft | Power Inductors - Leaded 16uH Unshld 6.7A 20mOhms | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT1-180-1.5L | Coilcraft | Fixed Inductors DMT1 Power Chokes Toroidal Output | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1-26-5.1L | Coilcraft | Fixed Inductors DMT1 Power Chokes Toroidal Output | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1-43-3.8L | Coilcraft | Power Inductors - Leaded 43uH Unshld 3.8A 70mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1-7-10L | Coilcraft | Power Inductors - Leaded 7uH Shld 10A 10mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1-84-2.4L | Coilcraft | Power Inductors - Leaded 84uH Unshld 2.4A 140mOhms | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H003SPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 152A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H003SPSW-13 | Diodes Inc | MOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H003SPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LCG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 12.4A/47A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 1531 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LCG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LCG-7 | DIODES INC. | Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009LCG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 12.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LCG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 12.9mΩ Drain current: 9.9A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LCG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 12.4A/47A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LCG-7 | DIODES INC. | Description: DIODES INC. - DMT10H009LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 47 A, 0.0072 ohm, VDFN3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009LCG-7 | Diodes Inc | Trans MOSFET N-CH 100V 12.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LCG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; Idm: 160A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 12.9mΩ Drain current: 9.9A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-13 | Diodes Zetex | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 11A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | Diodes Inc | Trans MOSFET N-CH 100V 13A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 11A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 13A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 13A/50A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LH3 | Diodes Inc | Trans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LH3 | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LH3 | Diodes Zetex | Trans MOSFET N-CH 100V 84A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LH3 | Diodes Incorporated | Description: MOSFET N-CH 100V 84A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LH3 | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 336A; 61W; TO251 Mounting: THT Case: TO251 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 67A Power dissipation: 61W Polarisation: unipolar Kind of package: tube Gate charge: 20.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 336A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LK3 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 8965 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009LK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 1755000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H009LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 8965 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009LK3-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 1756022 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; Idm: 360A; 3W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 13mΩ Drain current: 73A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K | auf Bestellung 19015 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LK3-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 8A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS-13 | Diodes Inc | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 360A; 2.9W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 8A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 46074 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 3793 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 13A/48A 8SO T&R Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 149896 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 13A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 13A/48A 8SO T&R Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | auf Bestellung 147500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009LSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 13.8mΩ Drain current: 10A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 13A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H009LSS-13 | Diodes Inc | Trans MOSFET N-CH 100V 13A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 110A; 2.5W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 13.8mΩ Drain current: 10A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40.2nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LSSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009LSSQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V SO-8 T&R Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SCG-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V V-DFN3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SCG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V V-DFN3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SCG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V V-DFN3333-8 T&R 2K | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SCG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V V-DFN3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H009SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 91 A, 0.0069 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 91A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0069ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1576 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 9.1mΩ Drain current: 75A Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SK3-13 | Diodes Inc | MOSFET BVDSS: 61V100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 360A; 3.2W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 9.1mΩ Drain current: 75A Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H009SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 91 A, 0.0069 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 91A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0069ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1576 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H009SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 80 A, 0.0067 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | auf Bestellung 95000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SPS-13 | Diodes Inc | Trans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 11A Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H009SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 80 A, 0.0067 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H009SPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 61V-100V | auf Bestellung 8210 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | auf Bestellung 95724 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 320A; 2.7W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 11A Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 320A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 14A 8-Pin PowerDI EP T/R | auf Bestellung 282500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H009SPS-13 транзистор Produktcode: 197183 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
DMT10H009SSS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V-100V SO-8 T&R Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H009SSS-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H009SSS-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | auf Bestellung 92 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LCT | Diodes Zetex | Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LCT | Diodes Inc | Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | Diodes Zetex | Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB Mounting: THT Case: TO220AB Type of transistor: N-MOSFET On-state resistance: 6.9mΩ Drain current: 62A Power dissipation: 139W Polarisation: unipolar Kind of package: tube Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 92A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 62A; Idm: 92A; 139W; TO220AB Mounting: THT Case: TO220AB Type of transistor: N-MOSFET On-state resistance: 6.9mΩ Drain current: 62A Power dissipation: 139W Polarisation: unipolar Kind of package: tube Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 92A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | Diodes Zetex | Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LCT | Diodes Incorporated | Description: MOSFET N-CH 100V 98A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V | auf Bestellung 12423 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LCT | Diodes Zetex | Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 68.8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V | auf Bestellung 72888 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Mounting: SMD Case: DPAK Power dissipation: 3W Kind of package: reel; tape On-state resistance: 15mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Polarisation: unipolar Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 275A Drain current: 55A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Mounting: SMD Case: DPAK Power dissipation: 3W Kind of package: reel; tape On-state resistance: 15mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Polarisation: unipolar Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 275A Drain current: 55A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 68.8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V | auf Bestellung 72500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 61V-100V | auf Bestellung 38620 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 9.4A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V | auf Bestellung 5613 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LPS-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET Low Rdson | auf Bestellung 16557 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LPS-13 | Diodes Inc | Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 9.4A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H010LPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 98 A, 0.0069 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 139W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0069ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2456 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H010LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Type of transistor: N-MOSFET On-state resistance: 8.3mΩ Drain current: 98A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R | auf Bestellung 6667 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Type of transistor: N-MOSFET On-state resistance: 8.3mΩ Drain current: 98A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin PowerDI EP T/R | auf Bestellung 6667 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LSS-13 | Diodes Inc | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 11.5A/29.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V | auf Bestellung 71130 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 11.5A/29.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 3285 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LSSQ-13 | Diodes Zetex | MOSFET BVDSS: 61V100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010LSSQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Drain-source voltage: 100V Drain current: 8.6A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Case: PowerDI5060-8 Power dissipation: 1.2W Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010SPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 2431 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010SPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H010SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 113 A, 0.0066 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 113A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H010SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V | auf Bestellung 6884 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010SPS-13 | Diodes Inc | Trans MOSFET N-CH 100V 10.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010SPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H010SPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 113 A, 0.0066 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 113A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.2W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0066ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H010SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Drain-source voltage: 100V Drain current: 8.6A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Case: PowerDI5060-8 Power dissipation: 1.2W | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H010SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 113A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 8.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Diodes Inc | Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H014LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H014LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H014LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H014LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 2695 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 8.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 113232 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 9.4A/34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: V-DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LCG-13 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-13 | Diodes Inc | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | DIODES INC. | Description: DIODES INC. - DMT10H015LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 34 A, 0.0121 ohm, VDFN3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0121ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2704 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H015LCG-7 | Diodes Inc | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 9.4A/34A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: V-DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 3566 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LCG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LCG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 47984 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LCG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 9.4A/34A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: V-DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LCG-7 | DIODES INC. | Description: DIODES INC. - DMT10H015LCG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 34 A, 0.0121 ohm, VDFN3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: VDFN3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0121ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2704 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H015LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-13 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-13 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 14946 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-13 | Diodes Inc | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-7 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | auf Bestellung 8350 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Inc | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | auf Bestellung 1576 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 10A 8-Pin PowerDI EP T/R | auf Bestellung 1576 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 12987 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LK3-13 | Diodes Incorporated | Description: MOSFET N-CHANNEL 100V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 108480 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H015LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 52.7 A, 0.0107 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0107ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H015LK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 42.1A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 210A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LK3-13 | Diodes Incorporated | Description: MOSFET N-CHANNEL 100V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 107500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H015LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 52.7 A, 0.0107 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0107ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H015LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42.1A; Idm: 210A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 42.1A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 210A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 4890 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 52.7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 8A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 150A; 2.4W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 8A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.3A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 720 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.3A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | Diodes Inc | Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 7.3A 8-Pin PowerDI 5060 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LPS-13 | DIODES INC. | Description: DIODES INC. - DMT10H015LPS-13 - Leistungs-MOSFET, n-Kanal, 100 V, 44 A, 0.011 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 46W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H015LPS-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | auf Bestellung 2318 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Inc | Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015LSS-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | auf Bestellung 3062 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 8.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 29210 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 6.7A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 6.7A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 8.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 61V-100V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 54A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V | auf Bestellung 112500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015SK3-13 | Diodes Zetex | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 11.1mΩ Drain current: 43A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 215A | auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 11.1mΩ Drain current: 43A Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30.1nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 215A Anzahl je Verpackung: 1 Stücke | auf Bestellung 151 Stücke: Lieferzeit 7-14 Tag (e) |
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DMT10H015SK3-13 | Diodes Zetex | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SK3-13 | Diodes Inc | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SPS-13 | Diodes Zetex | 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H015SPS-13 | Diodes Inc | 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.1A Pulsed drain current: 120A Power dissipation: 1.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SPS-13 | Diodes Zetex | 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H015SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.1A; Idm: 120A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.1A Pulsed drain current: 120A Power dissipation: 1.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | Diodes Inc | Trans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K | auf Bestellung 2082 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H017LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 54.7A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 30.3mΩ Drain current: 43.7A Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.6nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | Diodes Zetex | Trans MOSFET N-CH 100V 54.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43.7A; Idm: 60A; 2.2W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 30.3mΩ Drain current: 43.7A Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28.6nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H017LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 54.7A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2348 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 47.2A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 47480 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025LK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 47.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 43.7mΩ Drain current: 37.7A Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 185A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H025LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 47.2 A, 0.0171 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0171ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H025LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 47.2A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025LK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 47.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LK3-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | auf Bestellung 2264 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025LK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H025LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 47.2 A, 0.0171 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0171ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H025LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37.7A; Idm: 185A; 2.6W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 43.7mΩ Drain current: 37.7A Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 185A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LSS-13 | Diodes Inc | MOSFET BVDSS: 61V100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 5.7A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LSS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V SO-8 T&R Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 5.7A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 32.9A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 41.2A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 41.2 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 41.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0178ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H025SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32.9A; Idm: 160A; 2.5W; TO252 Mounting: SMD Case: TO252 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 32.9A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SK3-13 | DIODES INC. | Description: DIODES INC. - DMT10H025SK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 41.2 A, 0.0178 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 41.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1.4W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0178ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H025SK3-13 | Diodes Zetex | Trans MOSFET N-CH 100V 41.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 41.2A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 54523 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 41.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K | auf Bestellung 5322 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V | auf Bestellung 35650 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | Diodes Zetex | Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | Diodes Inc | Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V | auf Bestellung 7362 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H025SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H025SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 15A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 75A; 2.4W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 15A Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032LFDF-13 | Diodes Inc | MOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFDF-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 46mΩ Drain current: 5A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFDF-7 | Diodes Inc | MOSFET BVDSS: 61V100V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT10H032LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 6 A, 0.024 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 533 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H032LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032LFDF-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H032LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT10H032LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 6 A, 0.024 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 533 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H032LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 40A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 46mΩ Drain current: 5A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-7 | DIODES INC. | Description: DIODES INC. - DMT10H032LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 17 A, 0.022 ohm, PowerDI3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1311 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H032LFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-7 | Diodes Inc | MOSFET BVDSS: 61V100V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 13A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032LFVW-7 | DIODES INC. | Description: DIODES INC. - DMT10H032LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 17 A, 0.022 ohm, PowerDI3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1311 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H032LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 68A; 2.5W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 13A Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO252 T&R Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LK3-13 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LK3-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LSS-13 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032LSS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V SO-8 T&R Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032SFVW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032SFVW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032SFVW-13 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032SFVW-7 | Diodes Inc | MOSFET BVDSS: 61V100V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032SFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V~100V PowerDI3333-8/SWP T&R 2K | auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032SFVW-7 | Diodes Zetex | DMT10H032SFVW-7 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H032SFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V | auf Bestellung 8755 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H032SFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H052LFDF-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H052LFDF-13 | Diodes Inc | MOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H052LFDF-7 | Diodes Inc | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H052LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H052LFDF-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-13 | Diodes Zetex | MOSFET BVDSS: 61V100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-7 | Diodes Zetex | MOSFET BVDSS: 61V100V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LDV-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-13 | Diodes Zetex | Trans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R | auf Bestellung 291000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H072LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT10H072LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 4 A, 0.047 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 800mW Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: UDFN2020 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.047ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2932 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H072LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT10H072LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 4 A, 0.047 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2932 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H072LFDF-7 | Diodes Inc | Trans MOSFET N-CH 100V 4A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDFQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDFQ-13 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDFQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K | auf Bestellung 14354 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDFQ-7 | Diodes Inc | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDFQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 112913 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET Application: automotive industry On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFDFQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET Application: automotive industry On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-13 | Diodes Zetex | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-13 | Diodes Inc | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS 61V-100V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-7 | DIODES INC. | Description: DIODES INC. - DMT10H072LFV-7 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0506 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0506ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H072LFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-7 | Diodes Zetex | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H072LFV-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V | auf Bestellung 301189 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS 61V-100V | auf Bestellung 7438 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFV-7 | DIODES INC. | Description: DIODES INC. - DMT10H072LFV-7 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0506 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0506ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H072LFV-7 | Diodes Zetex | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | auf Bestellung 182000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H072LFV-7 | Diodes Inc | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H072LFV-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFV-7 | Diodes Zetex | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H072LFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H075LE-13 | Diodes Zetex | MOSFET BVDSS: 61V100V SOT223 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H075LE-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V SOT223 T& Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H075LE-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SOT223 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M5LPS-13 | Diodes Inc | MOSFET BVDSS: 61V100V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M5LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V-100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H4M5LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 6.2mΩ Drain current: 15A Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Type of transistor: N-MOSFET On-state resistance: 6.2mΩ Drain current: 15A Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M9LPSW-13 | Diodes Zetex | MOSFET BVDSS: 61V100V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M9SPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H4M9SPSW-13 | Diodes Zetex | DMT10H4M9SPSW-13 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LCT | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO220AB T Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LCT | Diodes Zetex | DMT10H9M9LCT | auf Bestellung 7300 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H9M9LCT | DIODES INC. | Description: DIODES INC. - DMT10H9M9LCT - Leistungs-MOSFET, n-Kanal, 100 V, 101 A, 0.0067 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 101A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H9M9LCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V TO220AB TUBE 50PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LCT | Diodes Zetex | N-Channel Enhancement MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LCT | Diodes Inc | N-Channel Enhancement MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LK3-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LK3-13 | Diodes Zetex | MOSFET BVDSS: 61V100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9LSS-13 | Diodes Zetex | MOSFET BVDSS: 61V100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V TO220AB TUBE 50PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SCT | DIODES INC. | Description: DIODES INC. - DMT10H9M9SCT - Leistungs-MOSFET, n-Kanal, 100 V, 99 A, 0.0072 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 99A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT10H9M9SCT | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO220AB T Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H9M9SH3 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V TO251 TUB Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SH3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V 100V TO251 TUBE 75PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SK3-13 | Diodes Zetex | MOSFET BVDSS: 61V100V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V 100V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SSS-13 | Diodes Zetex | DMT10H9M9SSS-13 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT10H9M9SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H007LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K | auf Bestellung 20364 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H007LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H007LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H007LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 120V 90A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V | auf Bestellung 133659 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H007LPS-13 | Diodes Inc | Trans MOSFET N-CH 120V 90A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H007LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 120V 90A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V | auf Bestellung 130000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H007SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: 320A Drain-source voltage: 120V Drain current: 64A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H007SPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 2.9W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: 320A Drain-source voltage: 120V Drain current: 64A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H060LCA9-7 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V X4-DSN15 Packaging: Bulk Package / Case: 9-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: X2-DSN1515-9 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5.5V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H060LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V U-DFN202 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V | auf Bestellung 3568887 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H060LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H060LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H060LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V U-DFN202 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V | auf Bestellung 3567000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H060LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V U-DFN2020-6 T&R 3K | auf Bestellung 3425 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H065LFDF-13 | Diodes Inc | MOSFET BVDSS: 61V100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: U-DFN2020-6 Pulsed drain current: 25A Drain-source voltage: 115V Drain current: 3.4A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-13 | Diodes Incorporated | Description: MOSFET 61V~100V U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: U-DFN2020-6 Pulsed drain current: 25A Drain-source voltage: 115V Drain current: 3.4A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K | auf Bestellung 1005 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H065LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 115V 4.3A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H065LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H065LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 115V 4.3A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V | auf Bestellung 39259 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H090LFDF4-13 | Diodes Incorporated | Description: MOSFET N-CH 115V 3.4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerXDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: X2-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 115 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT12H090LFDF4-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V 250V X2-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H090LFDF4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W Mounting: SMD Drain-source voltage: 115V Drain current: 2.7A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: X2-DFN2020-6 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H090LFDF4-7 | Diodes Incorporated | Description: MOSFET N-CH 115V 3.4A 6DFN | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT12H090LFDF4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 2.7A; Idm: 15A; 1W Mounting: SMD Drain-source voltage: 115V Drain current: 2.7A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: X2-DFN2020-6 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT12H090LFDF4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V X2-DFN2020-6 T&R 3K | auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H017LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V POWERDI5 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V Qualification: AEC-Q101 | auf Bestellung 6425 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H017LPS-13 | Diodes Inc | Trans MOSFET N-CH 150V 9.4A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V POWERDI5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H017LPS-13 | DIODES INCORPORATED | DMT15H017LPS-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K | auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H017LPSW-13 | Diodes Inc | 150V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017LPSW-13 | DIODES INCORPORATED | DMT15H017LPSW-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017LPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V POWERDI5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017SK3-13 | DIODES INCORPORATED | DMT15H017SK3-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 101V~250V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017SK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V TO252 T& Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H017SK3-13 | Diodes Inc | MOSFET BVDSS: 101V250V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H035SCT | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V | auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H035SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V TO220AB TUBE 50PCS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H053SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 101V~250V TO252 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H053SK3-13 | Diodes Incorporated | Description: MOSFET BVDSS: 101V~250V TO252 T& Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V | auf Bestellung 39788 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H053SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 5.2A/15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H053SSS-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H053SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V SO-8 T&R 2.5K | auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT15H067SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 101V-250V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H067SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 4.5A/13A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT15H067SSS-13 | Diodes Inc | Trans MOSFET N-CH 150V 4.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D15K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 1500PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D1K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 1000PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D1K-F | Cornell Dubilier - CDE | Film Capacitors .0010uF 100Vdc | auf Bestellung 721 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1D1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 1000PF 10% 100VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.448" (11.37mm) Capacitance: 1000 pF Size / Dimension: 0.512" L x 0.197" W (13.00mm x 5.00mm) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D22K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 2200PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D22K-F | Cornell Dubilier - CDE | Film Capacitors .0022uF 100Vdc | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D22K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 2200PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D33K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 3300PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 4700PF 10% 100VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.448" (11.37mm) Capacitance: 4700 pF Size / Dimension: 0.512" L x 0.209" W (13.00mm x 5.30mm) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT1D47K-F | Cornell Dubilier - CDE | Film Capacitors .0047uF 100Vdc | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1D68K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 6800PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D68K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 6800PF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1D68K-F | Cornell Dubilier - CDE | Film Capacitors .0068uF 100Vdc | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1P15K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.15UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1P1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.1UF 10% 100VDC RADIAL | auf Bestellung 1414 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P1K-F | Cornell Dubilier - CDE | Film Capacitors .1UF 100V 10% | auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P22K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.22UF 10% 100VDC RAD | auf Bestellung 500500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P22K-F | Cornell Dubilier - CDE | Film Capacitors .22uF 100Vdc | auf Bestellung 529 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P33K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.33UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1P33K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.33UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1P33K-F | Cornell Dubilier - CDE | Film Capacitors 100Vdc .33uF | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1P47K-F | Cornell Dubilier - CDE | Film Capacitors .47uF 100Vdc | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.47UF 10% 100VDC RAD | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1P68K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.68UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S15K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.015UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S15K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.015UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S15K-F | Cornell Dubilier - CDE | Film Capacitors 0.015uF 100Vdc | auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1S1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 10000PF 10% 100VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.448" (11.37mm) Capacitance: 10000 pF Size / Dimension: 0.512" L x 0.220" W (13.00mm x 5.60mm) | auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT1S1K-F | Cornell Dubilier - CDE | Film Capacitors .01UF 100V 10% | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1S22K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.022UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S22K-F | Cornell Dubilier - CDE | Film Capacitors .022uF 100Vdc | auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1S22K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.022UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S33K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.033UF 10% 100VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.402" (10.20mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.444" (11.27mm) Capacitance: 0.033 µF Size / Dimension: 0.559" L x 0.248" W (14.20mm x 6.30mm) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S33K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.033UF 10% 100VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.402" (10.20mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.444" (11.27mm) Capacitance: 0.033 µF Size / Dimension: 0.559" L x 0.248" W (14.20mm x 6.30mm) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S33K-F | Cornell Dubilier - CDE | Film Capacitors 0.033uF 100Vdc | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.047UF 10% 100VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S47K-F | Cornell Dubilier - CDE | Film Capacitors 0.047uF 100V 10% | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1S68K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.068UF 10% 100VDC RAD | auf Bestellung 4931500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1S68K-F | Cornell Dubilier - CDE | Film Capacitors .068uF 100Vdc | auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT1W1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 1UF 10% 100VDC RADIAL Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 1.169" (29.70mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 65V Voltage Rating - DC: 100V Height - Seated (Max): 0.824" (20.92mm) Capacitance: 1 µF Size / Dimension: 1.331" L x 0.520" W (33.80mm x 13.20mm) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT1W1K-F | Cornell Dubilier - CDE | Film Capacitors 1uF 100V 10% | auf Bestellung 994 Stücke: Lieferzeit 214-218 Tag (e) |
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DMT2-134-4.8L | Coilcraft | Fixed Inductors 134uH Unshld 4.8A 100mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-149-3.8L | Coilcraft | Power Inductors - Leaded 149uH Unshld 3.8A 130mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-20-12L | Coilcraft | Power Inductors - Leaded 20uH Unshld 12A 20mOhms | auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2-200-3.8L | Coilcraft | Power Inductors - Leaded 200uH Unshld 3.8A 190mOhms | auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2-26-11L | Coilcraft | Power Inductors - Leaded 26uH Unshld 11A 20mOhms | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2-273-2.4L | Coilcraft | Power Inductors - Leaded 273uH Unshld 2.4A 260mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-380-2.4L | Coilcraft | Power Inductors - Leaded 380uH Shld 2.4A 380mOhms | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2-47-8.2L | Coilcraft | Power Inductors - Leaded 47uH Shld 8.2A 40mOhms | auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2-49-8L | Coilcraft | Fixed Inductors 49uH Unshld 8A 40mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-567-1.5L | Coilcraft | Power Inductors - Leaded 567uH Unshld 1.5A 560mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-79-6L | Coilcraft | Fixed Inductors 79uH Unshld 6A 70mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-796-1.5L | Coilcraft | Fixed Inductors 796uH Unshld 1.5A 790mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2-80-6.3L | Coilcraft | Power Inductors - Leaded 80uH Unshld 6.3A 50mOhms | auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 24V 14.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 24V 14.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2233 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 24V 14.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A Pulsed drain current: 70A Power dissipation: 1.8W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A Pulsed drain current: 70A Power dissipation: 1.8W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 24V 14.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFG-13 | Diodes Incorporated | Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFG-7 | Diodes Incorporated | Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1750 Stücke: Lieferzeit 457-461 Tag (e) |
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DMT2004UFG-7 | Diodes Incorporated | Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9988 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-13 | Diodes Incorporated | Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-7 | Diodes Incorporated | Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2004UFV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 3904 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2004UPS-13 | Diodes Incorporated | Description: MOSFET N-CH 24V 80A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2005UDV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 46.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2005UDV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 40A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 46.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2005UDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 24V 50A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2005UDV-13 | Diodes Inc | Trans MOSFET N-CH 24V 50A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2005UDV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2990 Stücke: Lieferzeit 363-367 Tag (e) |
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DMT2005UDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2005UDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 24V 50A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT26M0LDG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2D22K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 2200PF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2D22K-F | Cornell Dubilier - CDE | Film Capacitors 0.0022uF 200/250Vdc | auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2D47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 4700PF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2P1K-F | Cornell Dubilier - CDE | Film Capacitors .1UF 200V 10% | auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT2P1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.1UF 10% 250VDC RADIAL Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.669" (17.00mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 125V Voltage Rating - DC: 250V Height - Seated (Max): 0.606" (15.40mm) Part Status: Active Capacitance: 0.1 µF Size / Dimension: 0.819" L x 0.354" W (20.80mm x 9.00mm) | auf Bestellung 641 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2P1K-F | CORNELL DUBILIER | Description: CORNELL DUBILIER - DMT2P1K-F - CAPACITOR POLYESTER FILM 0.1UF, 200V, 10%, RADIAL tariffCode: 85322500 Produkthöhe: 15.4mm Bauform / Gehäuse des Kondensators: Radial Box - 2 Pin rohsCompliant: YES Anschlussabstand: 17mm hazardous: false rohsPhthalatesCompliant: YES Kapazitätstoleranz: 10% Kondensatormontage: Through Hole Qualifikation: - usEccn: EAR99 Betriebstemperatur, min.: -55°C Produktlänge: 20.8mm euEccn: NLR Dielektrikum: Film / Foil PET Spannung (AC): 0 Kapazität: 0.1µF Spannung (DC): 200V Produktpalette: DMT Series productTraceability: No Kondensatoranschlüsse: PC Pin Betriebstemperatur, max.: 125°C Feuchtigkeitsklasse: - Produktbreite: 0 directShipCharge: 25 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT2P22K-F | Cornell Dubilier Knowles | Description: CAP FILM 0.22UF 10% 250VDC RAD Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.795" (20.20mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 125V Voltage Rating - DC: 250V Height - Seated (Max): 0.724" (18.38mm) Part Status: Active Capacitance: 0.22 µF Size / Dimension: 0.945" L x 0.413" W (24.00mm x 10.50mm) | auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2P22K-F | Cornell Dubilier - CDE | Film Capacitors 0.22uF 200V 10% | auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2P33K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.33UF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2P47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.47UF 10% 250VDC RAD Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.921" (23.40mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 125V Voltage Rating - DC: 250V Height - Seated (Max): 0.822" (20.87mm) Capacitance: 0.47 µF Size / Dimension: 1.110" L x 0.531" W (28.20mm x 13.50mm) | auf Bestellung 1003 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2P47K-F | Cornell Dubilier - CDE | Film Capacitors 0.47uF 200V 10% | auf Bestellung 718 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT2P68K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.68UF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2P68K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.68UF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2S1K-F | Cornell Dubilier - CDE | Film Capacitors .01uF 200/250Vdc | auf Bestellung 651 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT2S1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 10000PF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT2S47K-F | Cornell Dubilier - CDE | Film Capacitors 0.047uF 200V 10% | auf Bestellung 2145 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT2S47K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.047UF 10% 250VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3-138-6L | Coilcraft | Fixed Inductors DMT1 Power Chokes Toroidal Output | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3-1439-1.5L | Coilcraft | Power Inductors - Leaded 1.439 mH Unshld 1.5A 1.176Ohms | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3-257-4.9L | Coilcraft | Power Inductors - Leaded 257uH Unshld 4.9A 150mOhms | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3-35-12L | Coilcraft | Power Inductors - Leaded 35uH Unshld 12A 19mOhms | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3-402-3.7L | Coilcraft | Power Inductors - Leaded 402uH Unshld - 3.7A 279mOhms | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3-695-2.4L | Coilcraft | Power Inductors - Leaded 695uH Unshld 2.4A 550mOhms | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3-77-8L | Coilcraft | Power Inductors - Leaded 77uH Unshld - 8A 40mOhms | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3002LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 100A PWRDI5060-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3002LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-13 | Diodes Incorporated | Description: MOSFET NCH 30V 22A POWERDI | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 22A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7288 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3003LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 22A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3003LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 2580 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3003LFGQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFGQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI333 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFGQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI333 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT3003LFGQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFGQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Application: automotive industry Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3003LFGQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Application: automotive industry Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LFG-13 | Diodes Incorporated | Description: MOSFET NCH 30V 10.4A POWERDI | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LFG-7 | Diodes Incorporated | Description: MOSFET NCH 30V 10.4A POWERDI | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 21A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3004LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI 5060 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Mounting: SMD Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43.7nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 180A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 17A On-state resistance: 6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Mounting: SMD Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43.7nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 180A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 17A On-state resistance: 6mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LPS-13 | Diodes Incorporated | MOSFET 30V N-Ch Enh FET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 21A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 2899 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDK-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDK-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V | auf Bestellung 5439 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LDV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 14.1A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-13 | Diodes Inc | Trans MOSFET N-CH 30V 14.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 14.1A 6UDFN Packaging: Tape & Box (TB) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFDF-7 | Diodes Inc | Trans MOSFET N-CH 30V 14.1A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 54769 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 14.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1094 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFDFQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Application: automotive industry Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Application: automotive industry Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFDFQ-7 | Diodes Inc | MOSFET BVDSS: 25V30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-13 | Diodes Inc | Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3611 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFG-7 | Diodes Inc | Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFV-13 | DIODES INC. | Description: DIODES INC. - DMT3006LFV-13 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0056 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT3006LFV-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFV-13 | DIODES INC. | Description: DIODES INC. - DMT3006LFV-13 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0056 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT3006LFV-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFV-13 | Diodes Inc | Trans MOSFET N-CH 30V 60A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFV-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 60A Automotive T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Application: automotive industry Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Application: automotive industry Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LFVQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFVQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2687 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LPB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Mounting: SMD Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80...100A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 9/11A On-state resistance: 14mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LPB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Mounting: SMD Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80...100A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 9/11A On-state resistance: 14mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LPB-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI506 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LPB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS 25V-30V | auf Bestellung 1005 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LPB-13 | Diodes Inc | Trans MOSFET N-CH 30V 11A/14A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3006LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 16A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 29958 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 16A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3008LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3008LFDF-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 0.5W 70A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3008LFDF-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh FET 20Vgs 0.5W 70A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3008LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 30A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | Diodes Inc | Trans MOSFET N-CH 30V 30A 8-Pin VDFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LDT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 1940 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LDT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 30A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 106809 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LEV | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LEV-13 | Diodes Incorporated | Description: MOSFET 25V-30V POWERDI3333-8 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LEV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LEV-7 | Diodes Incorporated | Description: MOSFET 25V-30V POWERDI3333-8 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LEV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-7 | Diodes Inc | Trans MOSFET N-CH 30V 12A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 2321 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V | auf Bestellung 4650 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 12A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-7 | Diodes Inc | Trans MOSFET N-CH 30V 12A Automotive 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10.6A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta), 16W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: V-DFN3030-8 (Type KS) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UDT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10.6A/30A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 14.6nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 14.6nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 10.6A/30A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3009UFVW-7 | Diodes Inc | 30V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3011LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3011LDT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3011LDT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active | auf Bestellung 17153 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LDV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 32A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active | auf Bestellung 44000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Mounting: SMD Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 25A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LDV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Mounting: SMD Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 25A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 32A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active | auf Bestellung 44814 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | auf Bestellung 2914 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFCL-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.6A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFCL-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CHA 30V 7.7A DFN2020 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.7A Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 700mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 700mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 829 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT3020LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 407657 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDB-7 | DIODES INC. | Description: DIODES INC. - DMT3020LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.7 A, 7.7 A, 0.02 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm Verlustleistung, p-Kanal: 700mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 700mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 829 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT3020LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 405000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 5875 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDBQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Application: automotive industry Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-13 | Diodes Inc | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Application: automotive industry Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Application: automotive industry Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-7 | Diodes Inc | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Application: automotive industry Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2295 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDBQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDBQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | auf Bestellung 5760 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDF-13 | Diodes Incorporated | Description: MOSFET NCH 30V 8.4A UDFN2020 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT3020LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT3020LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 92644 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDFQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDFQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Application: automotive industry Mounting: SMD Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDFQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Application: automotive industry Mounting: SMD Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDFQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 125000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Application: automotive industry Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDFQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Application: automotive industry Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFVW | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 38A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LFVW-7 | Diodes Zetex | 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LFVW-7 | Diodes Zetex | 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT3020LFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LSD-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K | auf Bestellung 2184 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 44853 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 42500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LSDQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Application: automotive industry Mounting: SMD Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 32mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LSDQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Application: automotive industry Mounting: SMD Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 32mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 913473 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LSDQ-13 | Diodes Inc | Trans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K | auf Bestellung 53150 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 912500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3020UFDB-13 | Diodes Inc | MOSFET BVDSS: 25V30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020UFDB-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020UFDB-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3020UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3022UEV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3022UEV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3022UEV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3022UEV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXD) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT30M9LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT30M9LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT30M9LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 160.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: PowerDI5060-8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT30M9LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT30M9LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT30M9LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 320A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT31M6LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS 25V-30V | auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT31M6LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 35.8A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 497500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT31M6LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 35.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT31M6LPS-13 | DIODES INCORPORATED | DMT31M6LPS-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT31M6LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 35.8A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 499945 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT31M7LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A PWRDI5060 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M4LFG-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M4LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M4LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0014 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1474 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT32M4LFG-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M4LFG-7 | DIODES INC. | Description: DIODES INC. - DMT32M4LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0014 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1474 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT32M4LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M4LPSW-13 | DIODES INC. | Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT32M4LPSW-13 | DIODES INC. | Description: DIODES INC. - DMT32M4LPSW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 83W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT32M5LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 833856 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 831000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 29928 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPS-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 25V-30V | auf Bestellung 4358 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 150A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 120A Drain-source voltage: 30V Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 350A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LPS-13 | DIODES INC. | Description: DIODES INC. - DMT32M5LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 0.0016 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 1847500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 120A Drain-source voltage: 30V Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 350A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 1849905 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M6LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 400µA Supplier Device Package: PowerDI3333-8 (Type G) Part Status: Active | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M6LDG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M6LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 400µA Supplier Device Package: PowerDI3333-8 (Type G) Part Status: Active | auf Bestellung 23990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M6LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 400µA Supplier Device Package: PowerDI3333-8 (Type G) Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M6LDG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT32M6LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 400µA Supplier Device Package: PowerDI3333-8 (Type G) Part Status: Active | auf Bestellung 7990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT334R2S474M3DTA0 | Murata Electronics | Supercapacitors / Ultracapacitors EDLC 470mF 4.2V 20% 21x14x3.5mm | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT334R2S474M3DTA0 | CAP-XX Ltd Supercapacitors | Description: CAP 470MF 4.2V -40-+85C Packaging: Bulk Tolerance: ±20% Package / Case: 3-SMD Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C ESR (Equivalent Series Resistance): 156mOhm @ 1kHz Height - Seated (Max): 0.150" (3.80mm) Part Status: Active Capacitance: 470 mF Voltage - Rated: 4.2 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT334R2S474M3DTA0 | Murata Electronics | Cap Supercap 0.47F 4.2V 20% (21 X 14 X 3.5mm) SMD Gull Wing Flat 0.13 Ohm 2000h 85C Bulk | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M1LPS-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 25V-30V | auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT34M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Drain to Source Voltage (Vdss): 30 V | auf Bestellung 317500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT34M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 5.2mΩ Drain current: 80A Drain-source voltage: 30V Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI®5060-8 Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M1LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0026 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: Lead (14-Jun-2023) | auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT34M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Drain to Source Voltage (Vdss): 30 V | auf Bestellung 319427 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT34M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 5.2mΩ Drain current: 80A Drain-source voltage: 30V Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI®5060-8 Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M1LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0026 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT34M2LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V 30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Drain to Source Voltage (Vdss): 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M2LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M2LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M8LFDE-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M8LFDE-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M8LFDE-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT34M8LFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V | auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT35M4LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 13 A, 0.0049 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 860mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0049ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5623 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT35M4LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V | auf Bestellung 67024 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT35M4LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 13 A, 0.0049 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 860mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0049ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5623 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT35M4LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | auf Bestellung 9812 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M4LFDF4-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V X2-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFDF4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V X2-DFN2020-6 T&R 3K | auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M4LFVW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M4LFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M4LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 16.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: PowerDI®3333-8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 9mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M4LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 110A; 1.5W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 16.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Case: PowerDI®3333-8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 9mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M7LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M7LFV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M7LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M7LFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M8LDG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT35M8LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M8LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT35M8LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT36M1LPS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT36M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W Mounting: SMD Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 12A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT36M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 0.0048 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0048ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT36M1LPS-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 25V-30V | auf Bestellung 4993 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT36M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 65A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | auf Bestellung 12884 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT36M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W Mounting: SMD Case: PowerDI5060-8 Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 12A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT36M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 0.0048 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0048ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT36M1LPS-13 | Diodes Inc | Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT36M1LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT36M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 65A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3N4R2U224M3DTA0 | CAP-XX Ltd Supercapacitors | Description: CAP 220MF 4.2V -40-+85C Packaging: Bulk Tolerance: ±20% Package / Case: 3-SMD Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C ESR (Equivalent Series Resistance): 360mOhm @ 1kHz Height - Seated (Max): 0.098" (2.50mm) Part Status: Active Capacitance: 220 mF Voltage - Rated: 4.2 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3N4R2U224M3DTA0 | Murata Electronics | Cap Supercap 0.22F 4.2V 20% (21 X 14 X 2.2mm) SMD Gull Wing Flat 0.3 Ohm 1000h 85C Box | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT3N4R2U224M3DTA0 | Murata Electronics | Supercapacitors / Ultracapacitors EDLC 220mF 4.2V 20% 21x14x2.2mm | auf Bestellung 4406 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT4001LPS-13 | Diodes Inc | 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4001LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4001LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V Power Dissipation (Max): 2.6W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4002LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS 31V-40V | auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 116.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4002LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4002LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 257500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4002LPS-13 | Diodes Inc | Trans MOSFET N-CH 40V 100A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4002LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 116.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4002LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0013 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4002LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 259780 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4003SCT | Diodes Inc | Trans MOSFET N-CH 40V 205A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4003SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 40V Drain current: 164A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Gate charge: 75.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4003SCT | Diodes Zetex | Trans MOSFET N-CH 40V 205A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4003SCT | DIODES INC. | Description: DIODES INC. - DMT4003SCT - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0024 ohm, TO-220AB, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4003SCT | Diodes Incorporated | Description: MOSFET N-CH 40V 205A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Power Dissipation (Max): 156W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4003SCT | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4003SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 40V Drain current: 164A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Gate charge: 75.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4004LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4004LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 90 A, 0.0025 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 138W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 26A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 72500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4004LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 1466 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4004LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 21A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 82.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 26A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 74468 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4004LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 21A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 82.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4005SCT | Diodes Zetex | Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4005SCT | Diodes Incorporated | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V | auf Bestellung 3950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4005SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 49.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4005SCT | Diodes Inc | Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4005SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4005SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 40V Drain current: 85A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 49.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V 40V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V 40V U-DFN2020-6 T&R 3K | auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4008LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT4008LFDF-7 - Leistungs-MOSFET, n-Kanal, 40 V, 11.8 A, 0.0078 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85415000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0078ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4008LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT4008LFDF-7 - Leistungs-MOSFET, n-Kanal, 40 V, 11.8 A, 0.0078 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85415000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 11.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0078ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4008LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Gate charge: 17.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Gate charge: 17.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4008LSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 2504 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-13 | Diodes Zetex | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-13 | Diodes Inc | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-13 | DIODES INC. | Description: DIODES INC. - DMT4011LFG-13 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 15.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0092ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4011LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 14957 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-13 | Diodes Zetex | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT4011LFG-13 | DIODES INC. | Description: DIODES INC. - DMT4011LFG-13 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 15.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0092ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4011LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-7 | DIODES INC. | Description: DIODES INC. - DMT4011LFG-7 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 15.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0092ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4011LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-7 | Diodes Zetex | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT4011LFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 1740 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-7 | DIODES INC. | Description: DIODES INC. - DMT4011LFG-7 - Leistungs-MOSFET, n-Kanal, 40 V, 30 A, 0.0092 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 15.6W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0092ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
DMT4011LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 40V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2235 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4011LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-7 | Diodes Zetex | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LFG-7 | Diodes Inc | Trans MOSFET N-CH 40V 10.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V 40V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4011LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 10.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 1.31W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4014LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 8.5A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4014LDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 2K | auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4014LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 8.5A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT40M9LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT43M8LFV-13 | Diodes Incorporated | MOSFETs 40V N-Ch Enhance Mode | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT43M8LFV-7 | Diodes Incorporated | MOSFETs 40V N-Ch Enhance Mode | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 14.8W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 On-state resistance: 15mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-7 | Diodes Inc | DUAL 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2LDV-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 14.8W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 On-state resistance: 15mΩ Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDVQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2LDVQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDVQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 2.34W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 15mΩ Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2LDVQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 40V 11.9A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.34W (Ta), 14.8W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2LDVQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.5A; Idm: 120A; 2.34W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 2.34W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 15mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2LDVQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K | auf Bestellung 2901 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVW-13 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K | auf Bestellung 3520 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V | auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVW-7 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V | auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.3A; Idm: 196A; 2.67W Mounting: SMD Drain-source voltage: 40V Drain current: 12.3A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 196A Case: PowerDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K | auf Bestellung 21502 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT47M2SFVWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT47M2SFVWQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4D47K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 4700PF 10% 400VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4D68K-F | Cornell Dubilier - CDE | Film Capacitors .0068UF 400V 10% | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
DMT4P1K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.1UF 10% 400VDC RADIAL | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4P1K-F | Cornell Dubilier - CDE | Film Capacitors 0.1uF 400V 10% | auf Bestellung 3038 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4P1K-F | Cornell Dubilier Knowles | Description: CAP FILM 0.1UF 10% 400VDC RADIAL Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.732" (18.60mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 200V Voltage Rating - DC: 400V Height - Seated (Max): 0.763" (19.37mm) Part Status: Active Capacitance: 0.1 µF Size / Dimension: 0.882" L x 0.472" W (22.40mm x 12.00mm) | auf Bestellung 1816 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4P22K | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.22UF 10% 400VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4P22K-F | Cornell Dubilier - CDE | Film Capacitors 0.22uF 400V 10% | auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4P22K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 0.22UF 10% 400VDC RAD | Produkt ist nicht verfügbar | |||||||||||||||||||
DMT4S1K-F | Cornell Dubilier Electronics (CDE) | Description: CAP FILM 10000PF 10% 400VDC RAD Tolerance: ±10% Packaging: Bulk Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Applications: General Purpose Lead Spacing: 0.402" (10.20mm) Termination: PC Pins Dielectric Material: Polyester, Metallized Voltage Rating - AC: 200V Voltage Rating - DC: 400V Height - Seated (Max): 0.551" (14.00mm) Part Status: Active Capacitance: 10000 pF Size / Dimension: 0.567" L x 0.331" W (14.40mm x 8.40mm) | auf Bestellung 27979 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT4S1K-F | Cornell Dubilier - CDE | Film Capacitors 0.01uF 400V 10% | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |