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DMT10H072LFV-13 Diodes Incorporated
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Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.33 EUR |
9000+ | 0.31 EUR |
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Technische Details DMT10H072LFV-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V.
Weitere Produktangebote DMT10H072LFV-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMT10H072LFV-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMT10H072LFV-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMT10H072LFV-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT10H072LFV-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
|
DMT10H072LFV-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |