DMT2004UFV-13 DIODES INCORPORATED
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 55A
Pulsed drain current: 90A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMT2004UFV-13 DIODES INCORPORATED
Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Weitere Produktangebote DMT2004UFV-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT2004UFV-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMT2004UFV-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMT2004UFV-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |