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DMT12H090LFDF4-13

DMT12H090LFDF4-13 Diodes Incorporated

DMT12H090LFDF4.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 115V 3.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerXDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: X2-DFN2020-6
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.52 EUR
30000+ 0.51 EUR
Mindestbestellmenge: 10000
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Technische Details DMT12H090LFDF4-13 Diodes Incorporated

Description: MOSFET N-CH 115V 3.4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerXDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: X2-DFN2020-6, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 115 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V.

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DMT12H090LFDF4-13 DMT12H090LFDF4-13 Hersteller : Diodes Incorporated DIOD_S_A0011929010_1-2543627.pdf MOSFET MOSFET BVDSS: 101V 250V X2-DFN2020-6 T&R 10K
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