DMT32M5LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
auf Bestellung 760000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.55 EUR |
| 5000+ | 0.52 EUR |
| 12500+ | 0.48 EUR |
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Technische Details DMT32M5LPS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V.
Weitere Produktangebote DMT32M5LPS-13 nach Preis ab 0.51 EUR bis 1.44 EUR
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DMT32M5LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V |
auf Bestellung 762465 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT32M5LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 120A Drain-source voltage: 30V Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 350A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT32M5LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 3.2W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 120A Drain-source voltage: 30V Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 350A |
Produkt ist nicht verfügbar |