Technische Details DMT35M7LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W, Case: PowerDI3333-8, Kind of package: reel; tape, Pulsed drain current: 90A, Mounting: SMD, Drain-source voltage: 30V, Drain current: 61A, On-state resistance: 8.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.98W, Polarisation: unipolar, Gate charge: 36nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMT35M7LFV-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
DMT35M7LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
DMT35M7LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |