DMT4008LFV-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMT4008LFV-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 40V, Drain current: 9.7A, On-state resistance: 12mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.9W, Polarisation: unipolar, Gate charge: 17.1nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 70A, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMT4008LFV-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
DMT4008LFV-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V |
Produkt ist nicht verfügbar |
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DMT4008LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Gate charge: 17.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A |
Produkt ist nicht verfügbar |