Technische Details DMT3020LFDF-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W, Case: U-DFN2020-6, Mounting: SMD, Power dissipation: 1.1W, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 40A, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 5.4A, On-state resistance: 28mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMT3020LFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMT3020LFDF-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET NCH 30V 8.4A UDFN2020 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT3020LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.1W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMT3020LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.1W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |