Produkte > DIODES INCORPORATED > DMT3011LDT-7
DMT3011LDT-7

DMT3011LDT-7 Diodes Incorporated

DMT3011LDT.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.54 EUR
6000+ 0.51 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT3011LDT-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A, Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type K), Part Status: Active.

Weitere Produktangebote DMT3011LDT-7 nach Preis ab 0.61 EUR bis 1.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT3011LDT-7 DMT3011LDT-7 Hersteller : Diodes Incorporated DMT3011LDT.pdf Description: MOSFET 2N-CH 30V 8A/10.7A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 17153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
15+ 1.24 EUR
100+ 0.86 EUR
500+ 0.71 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 13
DMT3011LDT-7 DMT3011LDT-7 Hersteller : Diodes Incorporated DMT3011LDT.pdf MOSFET MOSFET BVDSS
Produkt ist nicht verfügbar