DMT3003LFGQ-7 Diodes Incorporated
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details DMT3003LFGQ-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W, Application: automotive industry, Mounting: SMD, Type of transistor: N-MOSFET, Power dissipation: 2.4W, Polarisation: unipolar, On-state resistance: 5.5mΩ, Drain current: 18A, Drain-source voltage: 30V, Kind of package: reel; tape, Case: PowerDI3333-8, Gate charge: 44nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 100A, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote DMT3003LFGQ-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT3003LFGQ-7 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar On-state resistance: 5.5mΩ Drain current: 18A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMT3003LFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 25V-30V |
Produkt ist nicht verfügbar |
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| DMT3003LFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar On-state resistance: 5.5mΩ Drain current: 18A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |