DMT2004UFDF-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2736 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1.02 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.38 EUR |
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Technische Details DMT2004UFDF-7 Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V, Power Dissipation (Max): 800mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT2004UFDF-7 nach Preis ab 0.32 EUR bis 1.06 EUR
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DMT2004UFDF-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT2004UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A Pulsed drain current: 70A Power dissipation: 1.8W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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DMT2004UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 24V 14.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMT2004UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A Pulsed drain current: 70A Power dissipation: 1.8W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |