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DMT3009LFVWQ-7 Diodes Incorporated
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Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
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Technische Details DMT3009LFVWQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT3009LFVWQ-7 nach Preis ab 0.4 EUR bis 1.13 EUR
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DMT3009LFVWQ-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVWQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar On-state resistance: 20mΩ Drain current: 10A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI®3333-8 Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT3009LFVWQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMT3009LFVWQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar On-state resistance: 20mΩ Drain current: 10A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI®3333-8 Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |