DMT10H014LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.8 EUR |
| 5000+ | 0.76 EUR |
| 12500+ | 0.73 EUR |
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Technische Details DMT10H014LSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT10H014LSS-13 nach Preis ab 0.83 EUR bis 1.95 EUR
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DMT10H014LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 8.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 113245 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
auf Bestellung 3255 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H014LSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R |
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DMT10H014LSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R |
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DMT10H014LSS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 8.9A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMT10H014LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H014LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.1A; Idm: 54A; 1.67W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 25mΩ Drain current: 7.1A Power dissipation: 1.67W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
Produkt ist nicht verfügbar |