Produkte > DIODES INCORPORATED > DMT15H017LPS-13
DMT15H017LPS-13

DMT15H017LPS-13 Diodes Incorporated


DMT15H017LPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.11 EUR
5000+ 1.05 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT15H017LPS-13 Diodes Incorporated

Description: MOSFET BVDSS: 101V~250V POWERDI5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V, Qualification: AEC-Q101.

Weitere Produktangebote DMT15H017LPS-13 nach Preis ab 1.14 EUR bis 2.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT15H017LPS-13 DMT15H017LPS-13 Hersteller : Diodes Incorporated DMT15H017LPS.pdf Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.68 EUR
10+ 2.19 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 7
DMT15H017LPS-13 DMT15H017LPS-13 Hersteller : Diodes Incorporated DIOD_S_A0009189211_1-2543246.pdf MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.83 EUR
10+ 2.53 EUR
100+ 1.97 EUR
500+ 1.63 EUR
1000+ 1.29 EUR
2500+ 1.2 EUR
5000+ 1.14 EUR
DMT15H017LPS-13 DMT15H017LPS-13 Hersteller : Diodes Inc dmt15h017lps.pdf Trans MOSFET N-CH 150V 9.4A 8-Pin PowerDI EP T/R
Produkt ist nicht verfügbar
DMT15H017LPS-13 Hersteller : DIODES INCORPORATED DMT15H017LPS.pdf DMT15H017LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar