DMT3009LFVWQ-13 DIODES INCORPORATED
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Application: automotive industry
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 10A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMT3009LFVWQ-13 DIODES INCORPORATED
Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT3009LFVWQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT3009LFVWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMT3009LFVWQ-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMT3009LFVWQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar On-state resistance: 20mΩ Drain current: 10A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |