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DMT10H075LE-13

DMT10H075LE-13 Diodes Incorporated

DMT10H075LE.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT223 T&
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.32 EUR
5000+ 0.3 EUR
12500+ 0.28 EUR
Mindestbestellmenge: 2500
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Technische Details DMT10H075LE-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V SOT223 T&, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V.

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DMT10H075LE-13 Hersteller : Diodes Zetex DMT10H075LE.pdf MOSFET BVDSS: 61V100V SOT223 T&R 2.5K
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DMT10H075LE-13 Hersteller : Diodes Incorporated DMT10H075LE.pdf MOSFET MOSFET BVDSS: 61V-100V SOT223 T&R 2.5K
Produkt ist nicht verfügbar