![DMT30M9LPS-13 DMT30M9LPS-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/966/31%3BPowerDI5060-8TypeK%3B%3B8.jpg)
DMT30M9LPS-13 Diodes Incorporated
![DMT30M9LPS.pdf](/images/adobe-acrobat.png)
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.95 EUR |
5000+ | 1.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT30M9LPS-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V.
Weitere Produktangebote DMT30M9LPS-13 nach Preis ab 2.05 EUR bis 4.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DMT30M9LPS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
DMT30M9LPS-13 | Hersteller : Diodes Inc |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
DMT30M9LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar On-state resistance: 1.6mΩ Drain current: 100A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 160.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
DMT30M9LPS-13 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
DMT30M9LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar On-state resistance: 1.6mΩ Drain current: 100A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 160.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |