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DMT3006LDK-7

DMT3006LDK-7 Diodes Incorporated


DMT3006LDK.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
Mindestbestellmenge: 3000
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Technische Details DMT3006LDK-7 Diodes Incorporated

Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V.

Weitere Produktangebote DMT3006LDK-7 nach Preis ab 0.23 EUR bis 0.77 EUR

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DMT3006LDK-7 DMT3006LDK-7 Hersteller : Diodes Incorporated DMT3006LDK.pdf Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 5764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
100+ 0.44 EUR
500+ 0.35 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
DMT3006LDK-7 DMT3006LDK-7 Hersteller : Diodes Incorporated DMT3006LDK.pdf MOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 2899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.77 EUR
10+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
3000+ 0.25 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 4