DMT3006LFDF-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
On-state resistance: 15mΩ
Drain current: 12.5A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: U-DFN2020-6
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMT3006LFDF-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W, Mounting: SMD, Type of transistor: N-MOSFET, Power dissipation: 2.1W, Polarisation: unipolar, On-state resistance: 15mΩ, Drain current: 12.5A, Drain-source voltage: 30V, Kind of package: reel; tape, Case: U-DFN2020-6, Gate charge: 16.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 80A, Anzahl je Verpackung: 10000 Stücke.
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DMT3006LFDF-13 | Hersteller : Diodes Incorporated |
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DMT3006LFDF-13 | Hersteller : Diodes Incorporated |
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| DMT3006LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar On-state resistance: 15mΩ Drain current: 12.5A Drain-source voltage: 30V Kind of package: reel; tape Case: U-DFN2020-6 Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |