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DMT3009LDT-7 Diodes Incorporated
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Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
auf Bestellung 771000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
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Technische Details DMT3009LDT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type K), Part Status: Active.
Weitere Produktangebote DMT3009LDT-7 nach Preis ab 0.62 EUR bis 1.44 EUR
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DMT3009LDT-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active |
auf Bestellung 772834 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 3550 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LDT-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Power dissipation: 1.2W Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 80A Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT3009LDT-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Power dissipation: 1.2W Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 80A Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |