DMT10H010LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 68.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
auf Bestellung 127500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.82 EUR |
| 5000+ | 0.78 EUR |
| 12500+ | 0.75 EUR |
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Technische Details DMT10H010LK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 68.8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V.
Weitere Produktangebote DMT10H010LK3-13 nach Preis ab 0.78 EUR bis 1.99 EUR
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DMT10H010LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 61V-100V |
auf Bestellung 39785 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 68.8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V |
auf Bestellung 128064 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMT10H010LK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMT10H010LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 68.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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DMT10H010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Mounting: SMD Case: DPAK Type of transistor: N-MOSFET On-state resistance: 15mΩ Drain current: 55A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 53.7nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 275A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMT10H010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Mounting: SMD Case: DPAK Type of transistor: N-MOSFET On-state resistance: 15mΩ Drain current: 55A Power dissipation: 3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 53.7nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 275A |
Produkt ist nicht verfügbar |