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DMT10H010LPS-13 Diodes Incorporated
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Description: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.03 EUR |
5000+ | 0.99 EUR |
Produktrezensionen
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Technische Details DMT10H010LPS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.2W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.
Weitere Produktangebote DMT10H010LPS-13 nach Preis ab 0.73 EUR bis 2.5 EUR
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DMT10H010LPS-13 | Hersteller : Diodes Zetex |
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auf Bestellung 6667 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LPS-13 | Hersteller : Diodes Zetex |
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auf Bestellung 6667 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT10H010LPS-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 20077 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LPS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 10763 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H010LPS-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMT10H010LPS-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMT10H010LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Type of transistor: N-MOSFET On-state resistance: 8.3mΩ Drain current: 98A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT10H010LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 98A; 1.2W; PowerDI®5060-8 Mounting: SMD Case: PowerDI®5060-8 Type of transistor: N-MOSFET On-state resistance: 8.3mΩ Drain current: 98A Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |