DMT2004UFV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
| 10000+ | 0.3 EUR |
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Technische Details DMT2004UFV-7 Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Weitere Produktangebote DMT2004UFV-7 nach Preis ab 0.3 EUR bis 1.02 EUR
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DMT2004UFV-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 3904 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT2004UFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT2004UFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 24V Drain current: 55A Pulsed drain current: 90A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 10mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |