DMT3020LFDB-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.8W
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMT3020LFDB-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W, Case: U-DFN2020-6, Mounting: SMD, Power dissipation: 1.8W, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 50A, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 6.2A, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 10000 Stücke.
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Preis ohne MwSt |
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DMT3020LFDB-13 | Hersteller : Diodes Incorporated |
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DMT3020LFDB-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
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| DMT3020LFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |