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DMT10H015LSS-13

DMT10H015LSS-13 Diodes Incorporated


DMT10H015LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 27500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.72 EUR
5000+ 0.69 EUR
12500+ 0.66 EUR
Mindestbestellmenge: 2500
Produktrezensionen
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Technische Details DMT10H015LSS-13 Diodes Incorporated

Description: MOSFET N-CH 100V 8.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V.

Weitere Produktangebote DMT10H015LSS-13 nach Preis ab 0.51 EUR bis 1.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Zetex dmt10h015lss.pdf Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
178+0.88 EUR
180+ 0.84 EUR
203+ 0.72 EUR
250+ 0.68 EUR
500+ 0.6 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 178
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Zetex dmt10h015lss.pdf Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
169+0.93 EUR
185+ 0.82 EUR
187+ 0.78 EUR
210+ 0.67 EUR
250+ 0.63 EUR
500+ 0.56 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 169
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Incorporated DIOD_S_A0002833477_1-2542087.pdf MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
auf Bestellung 3104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.34 EUR
10+ 1.14 EUR
100+ 0.94 EUR
500+ 0.83 EUR
1000+ 0.73 EUR
2500+ 0.69 EUR
Mindestbestellmenge: 3
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 29210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 10
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Inc 168881399554136dmt10h015lss.pdf Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : Diodes Zetex dmt10h015lss.pdf Trans MOSFET N-CH 100V 8.3A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : DIODES INCORPORATED DMT10H015LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMT10H015LSS-13 DMT10H015LSS-13 Hersteller : DIODES INCORPORATED DMT10H015LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 54A; 1.67W; SO8
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Drain current: 6.7A
Power dissipation: 1.67W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Produkt ist nicht verfügbar