DMT10H072LFDFQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
| 30000+ | 0.3 EUR |
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Technische Details DMT10H072LFDFQ-7 Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT10H072LFDFQ-7 nach Preis ab 0.31 EUR bis 1.05 EUR
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DMT10H072LFDFQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 170165 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H072LFDFQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K |
auf Bestellung 13519 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT10H072LFDFQ-7 | Hersteller : Diodes Inc |
100V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMT10H072LFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET Application: automotive industry On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMT10H072LFDFQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; Idm: 22A; 1.1W Mounting: SMD Case: U-DFN2020-6 Type of transistor: N-MOSFET Application: automotive industry On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A |
Produkt ist nicht verfügbar |