Technische Details DMT3006LFVQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W, Application: automotive industry, Mounting: SMD, Type of transistor: N-MOSFET, Power dissipation: 2W, Polarisation: unipolar, On-state resistance: 11mΩ, Drain current: 45A, Drain-source voltage: 30V, Kind of package: reel; tape, Case: PowerDI3333-8, Gate charge: 16.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 90A, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMT3006LFVQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMT3006LFVQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar On-state resistance: 11mΩ Drain current: 45A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMT3006LFVQ-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMT3006LFVQ-13 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |
|
DMT3006LFVQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar On-state resistance: 11mΩ Drain current: 45A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |