DMT32M5LFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.75 EUR |
6000+ | 0.72 EUR |
10000+ | 0.68 EUR |
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Technische Details DMT32M5LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMT32M5LFG-7 nach Preis ab 0.72 EUR bis 1.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT32M5LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 29928 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT32M5LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMT32M5LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |