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DMN3023L-7 DMN3023L-7 DIODES INCORPORATED DMN3023L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
auf Bestellung 890 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.22 EUR
400+ 0.18 EUR
455+ 0.16 EUR
535+ 0.13 EUR
Mindestbestellmenge: 330
DMN3024LK3-13 DIODES INCORPORATED DMN3024LK3.pdf DMN3024LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3024LSD-13 DMN3024LSD-13 DIODES INCORPORATED DMN3024LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Polarisation: unipolar
On-state resistance: 36mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.3W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 344 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
136+ 0.53 EUR
231+ 0.31 EUR
244+ 0.29 EUR
Mindestbestellmenge: 117
DMN3024LSS-13 DIODES INCORPORATED DMN3024LSS.pdf DMN3024LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3024SFG-13 DIODES INCORPORATED DMN3024SFG.pdf DMN3024SFG-13 SMD N channel transistors
auf Bestellung 2893 Stücke:
Lieferzeit 7-14 Tag (e)
207+0.35 EUR
299+ 0.24 EUR
316+ 0.23 EUR
500+ 0.22 EUR
Mindestbestellmenge: 207
DMN3025LFDF-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3025LFDF-7 DIODES INCORPORATED DMN3025LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFG-13 DIODES INCORPORATED DMN3025LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFG-7 DIODES INCORPORATED DMN3025LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFV-13 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 55A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFV-7 DIODES INCORPORATED DMN3025LFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 55A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LSS-13 DMN3025LSS-13 DIODES INCORPORATED DMN3025LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3026LVT-7 DIODES INCORPORATED DMN3026LVT.pdf DMN3026LVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3027LFG-13 DIODES INCORPORATED DMN3027LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3027LFG-7 DIODES INCORPORATED DMN3027LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3028LQ-7 DMN3028LQ-7 DIODES INCORPORATED DMN3028LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3029LFG-7 DIODES INCORPORATED DMN3029LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 2.07W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 7.7A
Drain-source voltage: 30V
Power dissipation: 2.07W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 70A
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3030LSS-13 DMN3030LSS-13 DIODES INCORPORATED DMN3030LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 40A
Drain current: 6.75A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3032LE-13 DMN3032LE-13 DIODES INCORPORATED DMN3032LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 29mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN3032LFDB-13 DIODES INCORPORATED DMN3032LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Kind of package: reel; tape
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3032LFDB-7 DIODES INCORPORATED DMN3032LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3032LFDBQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3032LFDBQ-7 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3033LDM-7 DMN3033LDM-7 DIODES INCORPORATED DMN3033LDM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT26
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
123+0.59 EUR
300+ 0.24 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 123
DMN3033LSD-13 DMN3033LSD-13 DIODES INCORPORATED ds31262.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Polarisation: unipolar
On-state resistance: 27mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3033LSDQ-13 DMN3033LSDQ-13 DIODES INCORPORATED DMN3033LSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN3033LSN-7 DMN3033LSN-7 DIODES INCORPORATED DMN3033LSN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1065 Stücke:
Lieferzeit 7-14 Tag (e)
255+0.28 EUR
285+ 0.25 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 255
DMN3033LSNQ-7 DIODES INCORPORATED DMN3033LSNQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3035LWN-7 DIODES INCORPORATED DMN3035LWN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 9.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: V-DFN3030-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3042L-13 DMN3042L-13 DIODES INCORPORATED DMN3042L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3042L-7 DMN3042L-7 DIODES INCORPORATED DMN3042L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7235 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.24 EUR
525+ 0.14 EUR
590+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 305
DMN3042LFDF-13 DIODES INCORPORATED DMN3042LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3042LFDF-7 DIODES INCORPORATED DMN3042LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3051L-7 DMN3051L-7 DIODES INCORPORATED ds31347.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 20A
Power dissipation: 850mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3051LDM-7 DIODES INCORPORATED ds31523.pdf DMN3051LDM-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3053L-13 DMN3053L-13 DIODES INCORPORATED DMN3053L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SOT23
Drain-source voltage: 30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3053L-7 DMN3053L-7 DIODES INCORPORATED DMN3053L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
345+0.21 EUR
380+ 0.19 EUR
430+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 345
DMN3055LFDB-13 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 25A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3055LFDB-7 DIODES INCORPORATED DMN3055LFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 25A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3060LCA3-7 DIODES INCORPORATED DMN3060LCA3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 1.35W
Polarisation: unipolar
Gate charge: 1.118nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LW-13 DMN3060LW-13 DIODES INCORPORATED DMN3060LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LW-7 DMN3060LW-7 DIODES INCORPORATED DMN3060LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 0.5W; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3060LWQ-13 DMN3060LWQ-13 DIODES INCORPORATED DMN3060LWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LWQ-7 DMN3060LWQ-7 DIODES INCORPORATED DMN3060LWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3061LCA3-7 DIODES INCORPORATED DMN3061LCA3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W
Mounting: SMD
Case: X4-DSN1006-3
Polarisation: unipolar
Power dissipation: 1.88W
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3061SWQ-13 DIODES INCORPORATED DMN3061SWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3065LW-13 DMN3065LW-13 DIODES INCORPORATED DMN3065LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3065LW-7 DMN3065LW-7 DIODES INCORPORATED DMN3065LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
460+0.16 EUR
520+ 0.14 EUR
670+ 0.11 EUR
710+ 0.1 EUR
Mindestbestellmenge: 460
DMN3066LQ-13 DMN3066LQ-13 DIODES INCORPORATED DMN3066LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.9A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 21A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3067LW-13 DMN3067LW-13 DIODES INCORPORATED DMN3067LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 1.1W; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3067LW-7 DMN3067LW-7 DIODES INCORPORATED DMN3067LW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3160 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.24 EUR
560+ 0.13 EUR
625+ 0.11 EUR
730+ 0.098 EUR
770+ 0.093 EUR
Mindestbestellmenge: 300
DMN3070SSN-7 DIODES INCORPORATED DMN3070SSN.pdf DMN3070SSN-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3071LFR4-7 DIODES INCORPORATED DMN3071LFR4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: X2-DFN1010-3
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Mounting: SMD
Drain current: 0.16A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 20Ω
Pulsed drain current: 1A
Power dissipation: 2.2W
Gate charge: 4nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf DMN30H4D0L-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf DMN30H4D0L-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf DMN30H4D0LFDE-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0LFDE-7 DIODES INCORPORATED DMN30H4D0LFDE.pdf DMN30H4D0LFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D1S-13 DIODES INCORPORATED DMN30H4D1S.pdf DMN30H4D1S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D1S-7 DIODES INCORPORATED DMN30H4D1S.pdf DMN30H4D1S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
auf Bestellung 890 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
330+0.22 EUR
400+ 0.18 EUR
455+ 0.16 EUR
535+ 0.13 EUR
Mindestbestellmenge: 330
DMN3024LK3-13 DMN3024LK3.pdf
Hersteller: DIODES INCORPORATED
DMN3024LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3024LSD-13 DMN3024LSD.pdf
DMN3024LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Polarisation: unipolar
On-state resistance: 36mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.3W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 344 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
117+0.61 EUR
136+ 0.53 EUR
231+ 0.31 EUR
244+ 0.29 EUR
Mindestbestellmenge: 117
DMN3024LSS-13 DMN3024LSS.pdf
Hersteller: DIODES INCORPORATED
DMN3024LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3024SFG-13 DMN3024SFG.pdf
Hersteller: DIODES INCORPORATED
DMN3024SFG-13 SMD N channel transistors
auf Bestellung 2893 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
207+0.35 EUR
299+ 0.24 EUR
316+ 0.23 EUR
500+ 0.22 EUR
Mindestbestellmenge: 207
DMN3025LFDF-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3025LFDF-7 DMN3025LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFG-13 DMN3025LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFG-7 DMN3025LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Gate charge: 11.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 7.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFV-13 DMN3025LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 55A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LFV-7 DMN3025LFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 55A
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3025LSS-13 DMN3025LSS.pdf
DMN3025LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 40A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3026LVT-7 DMN3026LVT.pdf
Hersteller: DIODES INCORPORATED
DMN3026LVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3027LFG-13 DMN3027LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3027LFG-7 DMN3027LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 3W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 3W
Kind of package: reel; tape
Pulsed drain current: 70A
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 7.7A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3028LQ-7 DMN3028LQ.pdf
DMN3028LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3029LFG-7 DMN3029LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; Idm: 70A; 2.07W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 7.7A
Drain-source voltage: 30V
Power dissipation: 2.07W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 70A
On-state resistance: 26.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3030LSS-13 DMN3030LSS.pdf
DMN3030LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: 30V
Pulsed drain current: 40A
Drain current: 6.75A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 29mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN3032LFDB-13 DMN3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Kind of package: reel; tape
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3032LFDB-7 DMN3032LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3032LFDBQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3032LFDBQ-7 DMN3032LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN3033LDM-7 DMN3033LDM.pdf
DMN3033LDM-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT26
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
123+0.59 EUR
300+ 0.24 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 123
DMN3033LSD-13 ds31262.pdf
DMN3033LSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Polarisation: unipolar
On-state resistance: 27mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3033LSDQ-13 DMN3033LSDQ.pdf
DMN3033LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN3033LSN-7 DMN3033LSN.pdf
DMN3033LSN-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1065 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
255+0.28 EUR
285+ 0.25 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 255
DMN3033LSNQ-7 DMN3033LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3035LWN-7 DMN3035LWN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 9.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: V-DFN3030-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3042L-13 DMN3042L.pdf
DMN3042L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3042L-7 DMN3042L.pdf
DMN3042L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7235 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
525+ 0.14 EUR
590+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 305
DMN3042LFDF-13 DMN3042LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3042LFDF-7 DMN3042LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3051L-7 ds31347.pdf
DMN3051L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 20A
Power dissipation: 850mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3051LDM-7 ds31523.pdf
Hersteller: DIODES INCORPORATED
DMN3051LDM-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3053L-13 DMN3053L.pdf
DMN3053L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SOT23
Drain-source voltage: 30V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3053L-7 DMN3053L.pdf
DMN3053L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
380+ 0.19 EUR
430+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 345
DMN3055LFDB-13 DMN3055LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 25A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3055LFDB-7 DMN3055LFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 25A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3060LCA3-7 DMN3060LCA3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 1.35W
Polarisation: unipolar
Gate charge: 1.118nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LW-13 DMN3060LW.pdf
DMN3060LW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LW-7 DMN3060LW.pdf
DMN3060LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 0.5W; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMN3060LWQ-13 DMN3060LWQ.pdf
DMN3060LWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3060LWQ-7 DMN3060LWQ.pdf
DMN3060LWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 640mW
Polarisation: unipolar
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3061LCA3-7 DMN3061LCA3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W
Mounting: SMD
Case: X4-DSN1006-3
Polarisation: unipolar
Power dissipation: 1.88W
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3061SWQ-13 DMN3061SWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3065LW-13 DMN3065LW.pdf
DMN3065LW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN3065LW-7 DMN3065LW.pdf
DMN3065LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
460+0.16 EUR
520+ 0.14 EUR
670+ 0.11 EUR
710+ 0.1 EUR
Mindestbestellmenge: 460
DMN3066LQ-13 DMN3066LQ.pdf
DMN3066LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.9A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 21A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3067LW-13 DMN3067LW.pdf
DMN3067LW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 1.1W; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN3067LW-7 DMN3067LW.pdf
DMN3067LW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 0.5W; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.1A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
560+ 0.13 EUR
625+ 0.11 EUR
730+ 0.098 EUR
770+ 0.093 EUR
Mindestbestellmenge: 300
DMN3070SSN-7 DMN3070SSN.pdf
Hersteller: DIODES INCORPORATED
DMN3070SSN-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN3071LFR4-7 DMN3071LFR4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: X2-DFN1010-3
Drain-source voltage: 30V
Drain current: 2.7A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN30H14DLY-13 DMN30H14DLY.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Mounting: SMD
Drain current: 0.16A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 20Ω
Pulsed drain current: 1A
Power dissipation: 2.2W
Gate charge: 4nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN30H4D0L-13 DMN30H4D0L.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D0L-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0L-7 DMN30H4D0L.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D0L-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D0LFDE-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D0LFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D1S-13 DMN30H4D1S.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D1S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN30H4D1S-7 DMN30H4D1S.pdf
Hersteller: DIODES INCORPORATED
DMN30H4D1S-7 SMD N channel transistors
Produkt ist nicht verfügbar
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