DMN3065LW-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1240 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 460+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 670+ | 0.11 EUR |
| 710+ | 0.1 EUR |
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Technische Details DMN3065LW-7 DIODES INCORPORATED
Description: MOSFET N-CH 30V 4A SOT-323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V, Power Dissipation (Max): 770mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V.
Weitere Produktangebote DMN3065LW-7 nach Preis ab 0.1 EUR bis 0.74 EUR
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DMN3065LW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.77W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3065LW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT-323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
auf Bestellung 4074000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3065LW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
auf Bestellung 4074130 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3065LW-7 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC |
auf Bestellung 34386 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3065LW-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R |
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