DMN3033LSDQ-13 Diodes Incorporated
auf Bestellung 3704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3033LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN3033LSDQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMN3033LSDQ-13 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 30V 6.9A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|
 |
DMN3033LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 27mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
 |
DMN3033LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |
|
|
|
DMN3033LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |
|
|
|
DMN3033LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |