DMN3035LWN-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 0.81 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
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Technische Details DMN3035LWN-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 770mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3020-8 (Type N), Part Status: Active.
Weitere Produktangebote DMN3035LWN-7 nach Preis ab 0.26 EUR bis 0.82 EUR
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DMN3035LWN-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3035LWN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 9.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: V-DFN3030-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN3035LWN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 5.5A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 770mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3020-8 (Type N) Part Status: Active |
Produkt ist nicht verfügbar |
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| DMN3035LWN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 30A; 1.1W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 9.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: V-DFN3030-8 |
Produkt ist nicht verfügbar |