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DMN30H4D0LFDE-7

DMN30H4D0LFDE-7 Diodes Incorporated

DMN30H4D0LFDE.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
6000+ 0.28 EUR
Mindestbestellmenge: 3000
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Technische Details DMN30H4D0LFDE-7 Diodes Incorporated

Description: MOSFET N-CH 300V 550MA 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 630mW (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V.

Weitere Produktangebote DMN30H4D0LFDE-7 nach Preis ab 0.28 EUR bis 0.9 EUR

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Preis ohne MwSt
DMN30H4D0LFDE-7 DMN30H4D0LFDE-7 Hersteller : Diodes Incorporated DMN30H4D0LFDE.pdf Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 7779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
DMN30H4D0LFDE-7 DMN30H4D0LFDE-7 Hersteller : Diodes Incorporated DMN30H4D0LFDE.pdf MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
auf Bestellung 21796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.9 EUR
10+ 0.74 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.34 EUR
3000+ 0.29 EUR
9000+ 0.28 EUR
Mindestbestellmenge: 4
DMN30H4D0LFDE-7 Hersteller : DIODES INCORPORATED DMN30H4D0LFDE.pdf DMN30H4D0LFDE-7 SMD N channel transistors
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