Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75526) > Seite 1119 nach 1259
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| DMHC10H170SFJ-13 | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2.3/-1.9A Pulsed drain current: 13...-11A Power dissipation: 2.1W Case: V-DFN5045-12 Gate-source voltage: ±20V On-state resistance: 200/300mΩ Mounting: SMD Gate charge: 9.7/17.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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| DMHC3025LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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DMHC3025LSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 11.7/11.4nC Kind of channel: enhanced Pulsed drain current: 60...-30A Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 30/-30V Drain current: 6.1/-4.3A On-state resistance: 40/80mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.5W Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMHC4035LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/-3.8A; Idm: 25÷-15A Kind of package: reel; tape Drain current: 4.5/-3.8A On-state resistance: 58/100mΩ Gate charge: 12.5/11.1nC Case: SO8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 1.5W Pulsed drain current: 25...-15A Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Drain-source voltage: 40/-40V |
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DMHC4035LSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 58/100mΩ Mounting: SMD Gate charge: 12.5/11.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMHC6070LSD-13 | DIODES INCORPORATED |
DMHC6070LSD-13 Multi channel transistors |
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| DMHT3006LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 30V Drain current: 10A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: V-DFN5045-12 Anzahl je Verpackung: 3000 Stücke |
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| DMHT6016LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Kind of package: reel; tape Power dissipation: 2.7W Polarisation: unipolar Case: V-DFN5045-12 Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 11.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
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| DMJ70H1D3SK3-13 | DIODES INCORPORATED | DMJ70H1D3SK3-13 SMD N channel transistors |
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| DMJ70H600SH3 | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 7A Pulsed drain current: 11A Power dissipation: 45W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMJT9435-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 3A Power dissipation: 1.2W Case: SOT223 Pulsed collector current: 6A Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Anzahl je Verpackung: 1 Stücke |
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DMMT2907A-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.28W Case: SOT26 Pulsed collector current: 1A Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 307MHz Anzahl je Verpackung: 1 Stücke |
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DMMT3904W-13-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 10000 Stücke |
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DMMT3904W-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3365 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT3904WQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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DMMT3906-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT26 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common base Anzahl je Verpackung: 5 Stücke |
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DMMT3906W-7-f | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Anzahl je Verpackung: 3000 Stücke |
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DMMT3906WQ-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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DMMT5401-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.2A Power dissipation: 0.3W Case: SOT26 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4415 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT5551-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Mounting: SMD Collector-emitter voltage: 160V Current gain: 50...250 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT26 Frequency: 100...300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 821 Stücke: Lieferzeit 7-14 Tag (e) |
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DMMT5551S-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Power dissipation: 0.3W Mounting: SMD Kind of package: reel; tape Case: SOT26 Frequency: 100...300MHz Collector-emitter voltage: 160V Current gain: 50...250 Collector current: 0.2A Type of transistor: NPN x2 Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN1001UCA10-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 90A Case: X2-TSN1820-10 Drain-source voltage: 12V Drain current: 16A On-state resistance: 6.9mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1004UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 12A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 70A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN1004UFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 50A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 80A Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN1004UFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 55A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1104 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN1006UCA6-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Kind of package: reel; tape Drain-source voltage: 12V Drain current: 13.2A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 35.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: X3-DSN2718-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1008UFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1008UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN1008UFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
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| DMN1019UFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 5A Power dissipation: 0.69W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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| DMN1019USN-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMN1019UVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMN1019UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMN1025UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Mounting: SMD Kind of package: reel; tape Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 12V Drain current: 5.5A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.7W Polarisation: unipolar Gate charge: 23.1nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2560 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN1029UFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.8A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
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| DMN1029UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Mounting: SMD Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 65mΩ Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN1045UFR4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Case: X2-DFN1010-3 Drain-source voltage: 12V Drain current: 3.2A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.26W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
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| DMN1054UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Case: X1-WLB0808-4 Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 8A Drain-source voltage: 8V Drain current: 3.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.34W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
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| DMN10H099SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 3000 Stücke |
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| DMN10H099SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
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| DMN10H099SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 2500 Stücke |
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| DMN10H100SK3-13 | DIODES INCORPORATED |
DMN10H100SK3-13 SMD N channel transistors |
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DMN10H120SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.4A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| DMN10H120SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H120SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H170SFDE-7 | DIODES INCORPORATED |
DMN10H170SFDE-7 SMD N channel transistors |
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| DMN10H170SFG-13 | DIODES INCORPORATED |
DMN10H170SFG-13 SMD N channel transistors |
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| DMN10H170SFG-7 | DIODES INCORPORATED |
DMN10H170SFG-7 SMD N channel transistors |
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| DMN10H170SK3-13 | DIODES INCORPORATED |
DMN10H170SK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMN10H170SK3Q-13 | DIODES INCORPORATED |
DMN10H170SK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMN10H170SVT-13 | DIODES INCORPORATED |
DMN10H170SVT-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMN10H170SVT-7 | DIODES INCORPORATED |
DMN10H170SVT-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMN10H170SVTQ-7 | DIODES INCORPORATED |
DMN10H170SVTQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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DMN10H220L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN10H220L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN10H220LE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H220LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMN10H220LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN10H220LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2497 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN10H220LPDW-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.4A Pulsed drain current: 32A Power dissipation: 2.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| DMHC10H170SFJ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2.3/-1.9A
Pulsed drain current: 13...-11A
Power dissipation: 2.1W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 200/300mΩ
Mounting: SMD
Gate charge: 9.7/17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2.3/-1.9A
Pulsed drain current: 13...-11A
Power dissipation: 2.1W
Case: V-DFN5045-12
Gate-source voltage: ±20V
On-state resistance: 200/300mΩ
Mounting: SMD
Gate charge: 9.7/17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMHC3025LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMHC3025LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 11.7/11.4nC
Kind of channel: enhanced
Pulsed drain current: 60...-30A
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
On-state resistance: 40/80mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Anzahl je Verpackung: 2500 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 11.7/11.4nC
Kind of channel: enhanced
Pulsed drain current: 60...-30A
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
On-state resistance: 40/80mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMHC4035LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/-3.8A; Idm: 25÷-15A
Kind of package: reel; tape
Drain current: 4.5/-3.8A
On-state resistance: 58/100mΩ
Gate charge: 12.5/11.1nC
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1.5W
Pulsed drain current: 25...-15A
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Drain-source voltage: 40/-40V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/-3.8A; Idm: 25÷-15A
Kind of package: reel; tape
Drain current: 4.5/-3.8A
On-state resistance: 58/100mΩ
Gate charge: 12.5/11.1nC
Case: SO8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1.5W
Pulsed drain current: 25...-15A
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Drain-source voltage: 40/-40V
Produkt ist nicht verfügbar
| DMHC4035LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMHC6070LSD-13 |
|
Hersteller: DIODES INCORPORATED
DMHC6070LSD-13 Multi channel transistors
DMHC6070LSD-13 Multi channel transistors
Produkt ist nicht verfügbar
| DMHT3006LFJ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: V-DFN5045-12
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: V-DFN5045-12
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMHT6016LFJ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMJ70H1D3SK3-13 |
Hersteller: DIODES INCORPORATED
DMJ70H1D3SK3-13 SMD N channel transistors
DMJ70H1D3SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMJ70H600SH3 |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMJT9435-13 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 6A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMMT2907A-7 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 1.28W; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.28W
Case: SOT26
Pulsed collector current: 1A
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 307MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMMT3904W-13-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMMT3904W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3365 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 690+ | 0.1 EUR |
| DMMT3904WQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMMT3906-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMMT3906W-7-f |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 3000 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMMT3906WQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMMT5401-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4415 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 216+ | 0.33 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 400+ | 0.18 EUR |
| 574+ | 0.12 EUR |
| DMMT5551-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Mounting: SMD
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Mounting: SMD
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 821 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 205+ | 0.35 EUR |
| 261+ | 0.27 EUR |
| 321+ | 0.22 EUR |
| 397+ | 0.18 EUR |
| 561+ | 0.13 EUR |
| 593+ | 0.12 EUR |
| DMMT5551S-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN1001UCA10-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 90A
Case: X2-TSN1820-10
Drain-source voltage: 12V
Drain current: 16A
On-state resistance: 6.9mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 90A
Case: X2-TSN1820-10
Drain-source voltage: 12V
Drain current: 16A
On-state resistance: 6.9mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN1004UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 12A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 12A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN1004UFV-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 50A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 50A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN1004UFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1104 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 161+ | 0.45 EUR |
| 243+ | 0.3 EUR |
| 257+ | 0.28 EUR |
| 1000+ | 0.27 EUR |
| DMN1006UCA6-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 13.2A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 35.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: X3-DSN2718-6
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 13.2A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 35.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: X3-DSN2718-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN1008UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN1008UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN1008UFDFQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN1019UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN1019USN-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN1019UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN1019UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN1025UFDB-7 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2560 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 400+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 535+ | 0.13 EUR |
| DMN1029UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN1029UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN1045UFR4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN1054UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.34W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.34W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN10H099SFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN10H099SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN10H099SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMN10H100SK3-13 |
|
Hersteller: DIODES INCORPORATED
DMN10H100SK3-13 SMD N channel transistors
DMN10H100SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H120SE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.4A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.4A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN10H120SFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN10H120SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN10H170SFDE-7 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SFDE-7 SMD N channel transistors
DMN10H170SFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SFG-13 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SFG-13 SMD N channel transistors
DMN10H170SFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SFG-7 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SFG-7 SMD N channel transistors
DMN10H170SFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SK3-13 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SK3-13 SMD N channel transistors
DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SK3Q-13 SMD N channel transistors
DMN10H170SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SVT-13 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SVT-13 SMD N channel transistors
DMN10H170SVT-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SVT-7 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SVT-7 SMD N channel transistors
DMN10H170SVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H170SVTQ-7 |
|
Hersteller: DIODES INCORPORATED
DMN10H170SVTQ-7 SMD N channel transistors
DMN10H170SVTQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN10H220L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN10H220L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 0.44 EUR |
| 365+ | 0.2 EUR |
| DMN10H220LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN10H220LFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN10H220LFVW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN10H220LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 207+ | 0.35 EUR |
| 262+ | 0.27 EUR |
| 296+ | 0.24 EUR |
| 350+ | 0.2 EUR |
| 370+ | 0.19 EUR |
| DMN10H220LPDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar