Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75526) > Seite 1116 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
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DFLZ6V2Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: PowerDI®123 Semiconductor structure: single diode Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DFLZ7V5-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 7.5V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: PowerDI®123 Semiconductor structure: single diode Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DFLZ9V1-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: PowerDI®123 Semiconductor structure: single diode Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DGD0211CWTQ-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0215WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0216WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0227S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0280WT-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0503FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0504FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: WDFN3030-10 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DGD0506AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0506AM10-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0507AFN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05463FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05473FN-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Mounting: SMD Case: VDFN10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -2.5...1.5A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Supply voltage: 4.2...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD05473FNQ-7 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1 Mounting: SMD Case: U-DFN3030-10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -2.5...1.5A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 25ns Number of channels: 1 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Supply voltage: 4.4...14V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD0590AFU-7 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD1503S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 10...20V Output current: -600...290mA Type of integrated circuit: driver Impulse rise time: 170ns Pulse fall time: 90ns Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: IGBT half-bridge; MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD1504S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 10...20V Output current: -600...290mA Type of integrated circuit: driver Impulse rise time: 170ns Pulse fall time: 90ns Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: IGBT half-bridge; MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2003S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2005S8-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGD2101MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; high-/low-side,gate driver; SO8; -600÷290mA; Ch: 1 Operating temperature: -40...125°C Output current: -600...290mA Type of integrated circuit: driver Impulse rise time: 170ns Pulse fall time: 90ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Mounting: SMD Case: SO8 Supply voltage: 10...20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2103MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Operating temperature: -40...125°C Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Case: SO8 Supply voltage: 10...20V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DGD2104MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge; gate driver; SO8; -600÷290mA; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2406 Stücke: Lieferzeit 7-14 Tag (e) |
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DGD2106MS8-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGD2110S16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2.5...2.5A Number of channels: 1 Supply voltage: 3.3...20V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 35ns Pulse fall time: 25ns Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2113S16-13 | DIODES INCORPORATED |
![]() Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2.5...2.5A Number of channels: 1 Supply voltage: 3.3...20V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 35ns Pulse fall time: 25ns Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2117S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2136MS28-13 | DIODES INCORPORATED |
![]() Description: IC: driver; gate driver; SO28; -350÷200mA; Ch: 1; 10÷20VDC Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Output current: -350...200mA Type of integrated circuit: driver Supply voltage: 10...20V DC Case: SO28 Kind of integrated circuit: gate driver Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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DGD21814S14-13 | DIODES INCORPORATED |
![]() Description: IC: driver Type of integrated circuit: driver Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2181MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Mounting: SMD Output current: -2.3...1.9A Type of integrated circuit: driver Operating temperature: -40...125°C Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 10...20V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DGD2181S8-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DGD2184MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Kind of package: reel; tape Operating temperature: -40...125°C Case: SO8 Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of integrated circuit: gate driver; high-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD21904MS14-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A Case: SO14 Mounting: SMD Output current: -4.5...4.5A Operating temperature: -40...125°C Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Supply voltage: 10...20V DC Type of integrated circuit: driver Number of channels: 2 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DGD2190MS8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Output current: -4.5...4.5A Operating temperature: -40...125°C Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Supply voltage: 10...20V Type of integrated circuit: driver Impulse rise time: 50ns Pulse fall time: 45ns Number of channels: 1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGD2304S8-13 | DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DGTD120T25S1PT | DIODES INCORPORATED |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Collector current: 25A Pulsed collector current: 100A Turn-on time: 110ns Turn-off time: 367ns Type of transistor: IGBT Power dissipation: 174W Kind of package: tube Gate charge: 204nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGTD65T15H2TF | DIODES INCORPORATED |
![]() Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 24W Case: ITO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 46ns Turn-off time: 280ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 702 Stücke: Lieferzeit 7-14 Tag (e) |
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DLD101-7 | DIODES INCORPORATED |
![]() Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V Type of integrated circuit: driver Kind of integrated circuit: LED driver Output current: 0.8A Number of channels: 1 Mounting: SMD Case: DFN8 Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM Operating voltage: 5...50V Topology: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DLD101Q-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V Type of integrated circuit: driver Output current: 800mA Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Application: automotive industry Integrated circuit features: linear dimming; PWM Kind of integrated circuit: LED driver Topology: single transistor Operating voltage: 5...50V |
auf Bestellung 2986 Stücke: Lieferzeit 7-14 Tag (e) |
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DLLFSD01LP3-7 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 85V; 300mA; 4ns; DFN0603-2; Ufmax: 0.94V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 85V Load current: 300mA Reverse recovery time: 4ns Semiconductor structure: single diode Max. forward voltage: 0.94V Case: DFN0603-2 Kind of package: reel; tape Leakage current: 200nA Max. forward impulse current: 2A Power dissipation: 0.2W Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DLP05LC-7-F | DIODES INCORPORATED |
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auf Bestellung 860 Stücke: Lieferzeit 7-14 Tag (e) |
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DLPA006-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array Type of diode: TVS array Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DLPT05-7-F | DIODES INCORPORATED |
![]() Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 300W Capacitance: 1.9pF Max. forward impulse current: 17A Breakdown voltage: 6V Leakage current: 20µA Number of channels: 1 Type of diode: diode arrays Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4730 Stücke: Lieferzeit 7-14 Tag (e) |
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DM1231-02SO-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array Type of diode: TVS array Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1029UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 12/-12V Drain current: 3.7/-2.3A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 0.065/0.21Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1030UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1030UFDBQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC2004DWK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.43/-0.54A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2021 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2004LPK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.6/-0.75A Power dissipation: 0.5W Case: X1-DFN1612-6 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC2004VK-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.53/-0.67A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC2020USD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Polarisation: unipolar On-state resistance: 0.02/0.033Ω Kind of package: reel; tape Drain current: 6.3/-7.8A Drain-source voltage: 20/-20V Case: SO8 Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±10V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 1.8W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 823 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.1/-4.5A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.035/0.074Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1705 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2038LVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3/-2.1A Power dissipation: 0.5W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.056/0.168Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2400UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Power dissipation: 0.45W Mounting: SMD Kind of package: reel; tape Case: SOT563 Features of semiconductor devices: ESD protected gate Drain-source voltage: 20/-20V Drain current: 0.8/-0.55A On-state resistance: 0.5/1Ω Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1360 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2450UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT563 Features of semiconductor devices: ESD protected gate Drain-source voltage: 20/-20V Drain current: 1.3/-0.7A On-state resistance: 1/0.5Ω Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2700UDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Power dissipation: 1.12W Mounting: SMD Kind of package: reel; tape Case: SOT26 Features of semiconductor devices: ESD protected gate Gate-source voltage: ±6V Drain-source voltage: 20/-20V Drain current: 1.14/-1.34A On-state resistance: 0.4/0.7Ω Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2245 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC2990UDJ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.35/-0.24A On-state resistance: 0.99/1.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC2990UDJQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC3016LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Polarisation: unipolar On-state resistance: 0.028/0.016Ω Kind of package: reel; tape Drain current: 8.2/-6.2A Drain-source voltage: 30/-30V Case: SO8 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 1.2W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 616 Stücke: Lieferzeit 7-14 Tag (e) |
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DFLZ6V2Q-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DFLZ7V5-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 7.5V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 7.5V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DFLZ9V1-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: PowerDI®123
Semiconductor structure: single diode
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DGD0211CWTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0215WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0216WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0227S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0280WT-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0503FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0504FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 3000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: WDFN3030-10
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DGD0506AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0506AM10-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0507AFN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD05463FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD05473FN-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: VDFN10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: VDFN10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.2...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD05473FNQ-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: U-DFN3030-10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.4...14V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 1
Mounting: SMD
Case: U-DFN3030-10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -2.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 25ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Supply voltage: 4.4...14V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD0590AFU-7 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD1503S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 10...20V
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 10...20V
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD1504S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 10...20V
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 10...20V
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2003S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2005S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2005S8-13 MOSFET/IGBT drivers
DGD2005S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
DGD2101MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -600÷290mA; Ch: 1
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Case: SO8
Supply voltage: 10...20V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -600÷290mA; Ch: 1
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 170ns
Pulse fall time: 90ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Case: SO8
Supply voltage: 10...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2103MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Case: SO8
Supply voltage: 10...20V DC
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Operating temperature: -40...125°C
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Case: SO8
Supply voltage: 10...20V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DGD2104MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; gate driver; SO8; -600÷290mA; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2406 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 1.5 EUR |
53+ | 1.36 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
500+ | 1 EUR |
DGD2106MS8-13 |
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Hersteller: DIODES INCORPORATED
DGD2106MS8-13 MOSFET/IGBT drivers
DGD2106MS8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
DGD2110S16-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 3.3...20V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 3.3...20V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2113S16-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 3.3...20V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2.5...2.5A
Number of channels: 1
Supply voltage: 3.3...20V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 35ns
Pulse fall time: 25ns
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2117S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2136MS28-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO28; -350÷200mA; Ch: 1; 10÷20VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Output current: -350...200mA
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Case: SO28
Kind of integrated circuit: gate driver
Anzahl je Verpackung: 1500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO28; -350÷200mA; Ch: 1; 10÷20VDC
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Output current: -350...200mA
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Case: SO28
Kind of integrated circuit: gate driver
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
DGD21814S14-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2181MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Output current: -2.3...1.9A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Output current: -2.3...1.9A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DGD2181S8-13 |
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Hersteller: DIODES INCORPORATED
DGD2181S8-13 MOSFET/IGBT drivers
DGD2181S8-13 MOSFET/IGBT drivers
Produkt ist nicht verfügbar
DGD2184MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Kind of package: reel; tape
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Kind of package: reel; tape
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD21904MS14-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Output current: -4.5...4.5A
Operating temperature: -40...125°C
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Output current: -4.5...4.5A
Operating temperature: -40...125°C
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DGD2190MS8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4.5...4.5A
Operating temperature: -40...125°C
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 10...20V
Type of integrated circuit: driver
Impulse rise time: 50ns
Pulse fall time: 45ns
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -4.5...4.5A
Operating temperature: -40...125°C
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 10...20V
Type of integrated circuit: driver
Impulse rise time: 50ns
Pulse fall time: 45ns
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGD2304S8-13 |
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Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DGTD120T25S1PT |
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Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 110ns
Turn-off time: 367ns
Type of transistor: IGBT
Power dissipation: 174W
Kind of package: tube
Gate charge: 204nC
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Collector current: 25A
Pulsed collector current: 100A
Turn-on time: 110ns
Turn-off time: 367ns
Type of transistor: IGBT
Power dissipation: 174W
Kind of package: tube
Gate charge: 204nC
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DGTD65T15H2TF |
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Hersteller: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 24W; ITO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 24W
Case: ITO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 280ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 702 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.89 EUR |
43+ | 1.7 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
DLD101-7 |
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Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Operating voltage: 5...50V
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.8A
Number of channels: 1
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Operating voltage: 5...50V
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DLD101Q-7 |
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V
Type of integrated circuit: driver
Output current: 800mA
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: LED driver
Topology: single transistor
Operating voltage: 5...50V
Category: LED drivers
Description: IC: driver; single transistor; LED driver; DFN8; 800mA; Ch: 1; 5÷50V
Type of integrated circuit: driver
Output current: 800mA
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Application: automotive industry
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: LED driver
Topology: single transistor
Operating voltage: 5...50V
auf Bestellung 2986 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.12 EUR |
162+ | 0.44 EUR |
183+ | 0.39 EUR |
218+ | 0.33 EUR |
230+ | 0.31 EUR |
DLLFSD01LP3-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 85V; 300mA; 4ns; DFN0603-2; Ufmax: 0.94V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 85V
Load current: 300mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Case: DFN0603-2
Kind of package: reel; tape
Leakage current: 200nA
Max. forward impulse current: 2A
Power dissipation: 0.2W
Anzahl je Verpackung: 10 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 85V; 300mA; 4ns; DFN0603-2; Ufmax: 0.94V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 85V
Load current: 300mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Max. forward voltage: 0.94V
Case: DFN0603-2
Kind of package: reel; tape
Leakage current: 200nA
Max. forward impulse current: 2A
Power dissipation: 0.2W
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DLP05LC-7-F |
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Hersteller: DIODES INCORPORATED
DLP05LC-7-F Unidirectional SMD transil diodes
DLP05LC-7-F Unidirectional SMD transil diodes
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
286+ | 0.25 EUR |
513+ | 0.14 EUR |
542+ | 0.13 EUR |
DLPA006-7 |
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Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Anzahl je Verpackung: 1 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DLPT05-7-F |
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Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 300W
Capacitance: 1.9pF
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Type of diode: diode arrays
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6V; 17A; 300W; SOT23; Features: ESD protection
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 300W
Capacitance: 1.9pF
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Type of diode: diode arrays
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 0.24 EUR |
565+ | 0.13 EUR |
635+ | 0.11 EUR |
710+ | 0.1 EUR |
750+ | 0.096 EUR |
3000+ | 0.094 EUR |
DM1231-02SO-7 |
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Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Anzahl je Verpackung: 1 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC1029UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 3.7/-2.3A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.065/0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 12/-12V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 12/-12V
Drain current: 3.7/-2.3A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.065/0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC1030UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC1030UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC2004DWK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.43/-0.54A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2021 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
269+ | 0.27 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
3000+ | 0.2 EUR |
DMC2004LPK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
Power dissipation: 0.5W
Case: X1-DFN1612-6
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.6/-0.75A
Power dissipation: 0.5W
Case: X1-DFN1612-6
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC2004VK-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.53/-0.67A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.53/-0.67A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±8V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC2020USD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
On-state resistance: 0.02/0.033Ω
Kind of package: reel; tape
Drain current: 6.3/-7.8A
Drain-source voltage: 20/-20V
Case: SO8
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±10V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Polarisation: unipolar
On-state resistance: 0.02/0.033Ω
Kind of package: reel; tape
Drain current: 6.3/-7.8A
Drain-source voltage: 20/-20V
Case: SO8
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±10V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 823 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
136+ | 0.53 EUR |
153+ | 0.47 EUR |
178+ | 0.4 EUR |
188+ | 0.38 EUR |
2500+ | 0.37 EUR |
DMC2038LVT-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.1/-4.5A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.035/0.074Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1705 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
475+ | 0.15 EUR |
560+ | 0.13 EUR |
605+ | 0.12 EUR |
635+ | 0.11 EUR |
DMC2038LVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.1A
Power dissipation: 0.5W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.056/0.168Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
169+ | 0.42 EUR |
321+ | 0.22 EUR |
414+ | 0.17 EUR |
439+ | 0.16 EUR |
DMC2400UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 0.45W
Mounting: SMD
Kind of package: reel; tape
Case: SOT563
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
On-state resistance: 0.5/1Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 0.45W
Mounting: SMD
Kind of package: reel; tape
Case: SOT563
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 20/-20V
Drain current: 0.8/-0.55A
On-state resistance: 0.5/1Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1360 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
315+ | 0.23 EUR |
735+ | 0.098 EUR |
1050+ | 0.068 EUR |
1110+ | 0.064 EUR |
3000+ | 0.063 EUR |
DMC2450UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT563
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 20/-20V
Drain current: 1.3/-0.7A
On-state resistance: 1/0.5Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT563
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 20/-20V
Drain current: 1.3/-0.7A
On-state resistance: 1/0.5Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
490+ | 0.15 EUR |
670+ | 0.11 EUR |
705+ | 0.1 EUR |
3000+ | 0.099 EUR |
DMC2700UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 1.12W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±6V
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Power dissipation: 1.12W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±6V
Drain-source voltage: 20/-20V
Drain current: 1.14/-1.34A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2245 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
321+ | 0.22 EUR |
589+ | 0.12 EUR |
736+ | 0.097 EUR |
773+ | 0.093 EUR |
819+ | 0.087 EUR |
3000+ | 0.084 EUR |
DMC2990UDJ-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.35/-0.24A
On-state resistance: 0.99/1.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.35/-0.24A
On-state resistance: 0.99/1.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT963
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC2990UDJQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3016LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.028/0.016Ω
Kind of package: reel; tape
Drain current: 8.2/-6.2A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 1.2W
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.028/0.016Ω
Kind of package: reel; tape
Drain current: 8.2/-6.2A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 1.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 616 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.37 EUR |
214+ | 0.33 EUR |
281+ | 0.25 EUR |
298+ | 0.24 EUR |