DMC2004LPK-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1612-6
Part Status: Active
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
| 75000+ | 0.19 EUR |
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Technische Details DMC2004LPK-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1612-6, Part Status: Active.
Weitere Produktangebote DMC2004LPK-7 nach Preis ab 0.21 EUR bis 0.69 EUR
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DMC2004LPK-7 | Hersteller : Diodes Incorporated |
MOSFET Complementary |
auf Bestellung 6099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2004LPK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.75A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1612-6 Part Status: Active |
auf Bestellung 126036 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2004LPK-7 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 20V 0.75A/0.6A 6-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| DMC2004LPK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.6/-0.75A Power dissipation: 0.5W Case: X1-DFN1612-6 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMC2004LPK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.6/-0.75A Power dissipation: 0.5W Case: X1-DFN1612-6 Gate-source voltage: ±8V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |