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DMC3021LK4-13 DMC3021LK4-13 DIODES INCORPORATED DMC3021LK4-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2292 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
169+ 0.42 EUR
269+ 0.27 EUR
285+ 0.25 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 120
DMC3025LSD-13 DMC3025LSD-13 DIODES INCORPORATED DMC3025LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2360 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
341+ 0.21 EUR
360+ 0.2 EUR
Mindestbestellmenge: 132
DMC3025LSDQ-13 DMC3025LSDQ-13 DIODES INCORPORATED DMC3025LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 9.8/10.5nC
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 5.1/-3.2A
On-state resistance: 32/85mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.77W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.028/0.025Ω
Kind of package: reel; tape
Drain current: 7.4/-7.1A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 2.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
199+ 0.36 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 179
DMC3028LSDX-13 DMC3028LSDX-13 DIODES INCORPORATED DMC3028LSDX-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
On-state resistance: 0.027/0.025Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3032LSD-13 DMC3032LSD-13 DIODES INCORPORATED DMC3032LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.032/0.039Ω
Kind of package: reel; tape
Drain current: 7/-8.1A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2337 Stücke:
Lieferzeit 7-14 Tag (e)
177+0.4 EUR
224+ 0.32 EUR
323+ 0.22 EUR
341+ 0.21 EUR
Mindestbestellmenge: 177
DMC3400SDW-7 DMC3400SDW-7 DIODES INCORPORATED DMC3400SDW-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SOT363
Kind of channel: enhanced
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
On-state resistance: 0.4/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.39W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1580 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
725+ 0.099 EUR
820+ 0.087 EUR
895+ 0.08 EUR
945+ 0.076 EUR
3000+ 0.073 EUR
Mindestbestellmenge: 295
DMC4015SSD-13 DMC4015SSD-13 DIODES INCORPORATED DMC4015SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.7W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1873 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
97+ 0.74 EUR
109+ 0.66 EUR
118+ 0.61 EUR
125+ 0.58 EUR
500+ 0.55 EUR
Mindestbestellmenge: 65
DMC4028SSD-13 DMC4028SSD-13 DIODES INCORPORATED DMC4028SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4029SSD-13 DMC4029SSD-13 DIODES INCORPORATED DMC4029SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4040SSD-13 DMC4040SSD-13 DIODES INCORPORATED DMC4040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
111+ 0.65 EUR
137+ 0.52 EUR
152+ 0.47 EUR
161+ 0.44 EUR
Mindestbestellmenge: 64
DMC4040SSDQ-13 DIODES INCORPORATED DMC4040SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4047LSD-13 DMC4047LSD-13 DIODES INCORPORATED DMC4047LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4050SSDQ-13 DIODES INCORPORATED DMC4050SSDQ_Web.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC6040SSD-13 DMC6040SSD-13 DIODES INCORPORATED DMC6040SSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2292 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
202+ 0.35 EUR
213+ 0.34 EUR
2500+ 0.32 EUR
Mindestbestellmenge: 91
DMC6040SSDQ-13 DMC6040SSDQ-13 DIODES INCORPORATED DMC6040SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMC67D8UFDBQ-7 DIODES INCORPORATED DMC67D8UFDBQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMG1012T-13 DMG1012T-13 DIODES INCORPORATED DMG1012TQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Gate charge: 736.6pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 3A
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1012T-7 DMG1012T-7 DIODES INCORPORATED DMG1012T-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1140 Stücke:
Lieferzeit 7-14 Tag (e)
590+0.12 EUR
1100+ 0.065 EUR
1140+ 0.063 EUR
Mindestbestellmenge: 590
DMG1012TQ-7 DMG1012TQ-7 DIODES INCORPORATED DMG1012T-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)
310+0.23 EUR
340+ 0.21 EUR
930+ 0.077 EUR
Mindestbestellmenge: 310
DMG1012UW-7 DMG1012UW-7 DIODES INCORPORATED DMG1012UW-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1030 Stücke:
Lieferzeit 7-14 Tag (e)
650+0.11 EUR
1030+ 0.07 EUR
12000+ 0.044 EUR
Mindestbestellmenge: 650
DMG1012UWQ-7 DMG1012UWQ-7 DIODES INCORPORATED DMG1012UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 6A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2690 Stücke:
Lieferzeit 7-14 Tag (e)
710+0.1 EUR
790+ 0.091 EUR
1030+ 0.07 EUR
1080+ 0.066 EUR
Mindestbestellmenge: 710
DMG1013T-7 DMG1013T-7 DIODES INCORPORATED ds31784.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.27W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3080 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
371+ 0.19 EUR
575+ 0.12 EUR
695+ 0.1 EUR
1558+ 0.046 EUR
1645+ 0.043 EUR
24000+ 0.042 EUR
Mindestbestellmenge: 250
DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Power dissipation: 0.27W
Polarisation: unipolar
Gate charge: 580pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -6A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG1013UW-7 DMG1013UW-7 DIODES INCORPORATED DMG1013UW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 32855 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.25 EUR
965+ 0.074 EUR
1215+ 0.059 EUR
1310+ 0.055 EUR
1355+ 0.053 EUR
1385+ 0.052 EUR
3000+ 0.05 EUR
Mindestbestellmenge: 295
DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Gate charge: 622.4pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -3A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1013UWQ-7 DMG1013UWQ-7 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5340 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.22 EUR
740+ 0.097 EUR
820+ 0.087 EUR
1030+ 0.07 EUR
1085+ 0.066 EUR
Mindestbestellmenge: 330
DMG1016UDW-7 DMG1016UDW-7 DIODES INCORPORATED DMG1016UDW-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.53W
On-state resistance: 0.45/0.75Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Gate-source voltage: ±6V
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Drain current: 0.85/-1.07A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
260+0.27 EUR
545+ 0.13 EUR
Mindestbestellmenge: 260
DMG1016UDWQ-7 DMG1016UDWQ-7 DIODES INCORPORATED DMG1016UDWQ_Rev1.3_Jan2022.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A
Type of transistor: N/P-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.33W
On-state resistance: 0.45Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±6V
Pulsed drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Drain current: 0.69/-0.548A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG1016V-7 DMG1016V-7 DIODES INCORPORATED ds31767.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.63/-0.46A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2674 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
510+ 0.14 EUR
575+ 0.12 EUR
635+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 325
DMG1016VQ-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.63/-0.46A
On-state resistance: 700mΩ/1.3Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 736.6/622.4pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1016VQ-7 DMG1016VQ-7 DIODES INCORPORATED DMG1016VQ-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.087/-0.064A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1023UV-7 DMG1023UV-7 DIODES INCORPORATED DMG1023UV.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
278+ 0.26 EUR
435+ 0.16 EUR
635+ 0.11 EUR
Mindestbestellmenge: 209
DMG1023UVQ-7 DIODES INCORPORATED DMG1023UVQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 622pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -3A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG1024UV-7 DMG1024UV-7 DIODES INCORPORATED DMG1024UV-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563
Mounting: SMD
Drain current: 0.89A
Drain-source voltage: 20V
Power dissipation: 0.53W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Type of transistor: N-MOSFET x2
Case: SOT563
Anzahl je Verpackung: 10 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
410+ 0.17 EUR
510+ 0.14 EUR
540+ 0.13 EUR
Mindestbestellmenge: 370
DMG1026UV-7 DMG1026UV-7 DIODES INCORPORATED DMG1026UV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.58W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3723 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.24 EUR
430+ 0.17 EUR
485+ 0.15 EUR
560+ 0.13 EUR
595+ 0.12 EUR
Mindestbestellmenge: 305
DMG1026UVQ-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 2.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Gate charge: 0.45pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1029SV-7 DMG1029SV-7 DIODES INCORPORATED DMG1029SV-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.66W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1029SVQ-7 DMG1029SVQ-7 DIODES INCORPORATED DMG1029SV-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.66W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG10N60SCT DMG10N60SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 15A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2301L-13 DMG2301L-13 DIODES INCORPORATED DMG2301L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23
Mounting: SMD
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1A
Drain-source voltage: -20V
Gate charge: 5.5nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2301LK-13 DMG2301LK-13 DIODES INCORPORATED DMG2301LK.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 298mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1.9A
Drain-source voltage: -20V
Gate charge: 3.4nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2301U-7 DMG2301U-7 DIODES INCORPORATED DMG2301U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -27A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2302UK-7
+1
 		DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
715+ 0.1 EUR
795+ 0.09 EUR
1040+ 0.069 EUR
1100+ 0.065 EUR
Mindestbestellmenge: 380
DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2305UX-13 DMG2305UX-13 DIODES INCORPORATED DMG2305UX.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED DMG2305UX.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2620 Stücke:
Lieferzeit 7-14 Tag (e)
700+0.1 EUR
850+ 0.085 EUR
960+ 0.075 EUR
1090+ 0.066 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 700
DMG2305UXQ-13 DMG2305UXQ-13 DIODES INCORPORATED DMG2305UXQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2305UXQ-7 DMG2305UXQ-7 DIODES INCORPORATED DMG2305UXQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG2307L-7 DMG2307L-7 DIODES INCORPORATED DMG2307L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)
270+0.27 EUR
685+ 0.1 EUR
Mindestbestellmenge: 270
DMG2307LQ-7 DMG2307LQ-7 DIODES INCORPORATED DMG2307LQ_Rev2.3_Feb2022.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG301NU-13 DMG301NU-13 DIODES INCORPORATED DMG301NU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5029 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.24 EUR
410+ 0.18 EUR
455+ 0.16 EUR
465+ 0.15 EUR
2500+ 0.14 EUR
Mindestbestellmenge: 305
DMG301NU-7 DMG301NU-7 DIODES INCORPORATED DMG301NU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
475+ 0.15 EUR
535+ 0.13 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 380
DMG302PU-13 DMG302PU-13 DIODES INCORPORATED DMG302PU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Case: SOT23
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG302PU-7 DMG302PU-7 DIODES INCORPORATED DMG302PU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.45W
Drain-source voltage: -25V
Drain current: -0.14A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3021LK4-13 DMC3021LK4-13.pdf
DMC3021LK4-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2292 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
169+ 0.42 EUR
269+ 0.27 EUR
285+ 0.25 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 120
DMC3025LSD-13 DMC3025LSD-13.pdf
DMC3025LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
On-state resistance: 0.02/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2360 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
341+ 0.21 EUR
360+ 0.2 EUR
Mindestbestellmenge: 132
DMC3025LSDQ-13 DMC3025LSDQ.pdf
DMC3025LSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 9.8/10.5nC
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 5.1/-3.2A
On-state resistance: 32/85mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.77W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3028LSD-13 DMC3028LSD-13.pdf
DMC3028LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.028/0.025Ω
Kind of package: reel; tape
Drain current: 7.4/-7.1A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 2.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 437 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
199+ 0.36 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 179
DMC3028LSDX-13 DMC3028LSDX-13.pdf
DMC3028LSDX-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
On-state resistance: 0.027/0.025Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC3032LSD-13 DMC3032LSD-13.pdf
DMC3032LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Polarisation: unipolar
On-state resistance: 0.032/0.039Ω
Kind of package: reel; tape
Drain current: 7/-8.1A
Drain-source voltage: 30/-30V
Case: SO8
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N/P-MOSFET
Mounting: SMD
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2337 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
177+0.4 EUR
224+ 0.32 EUR
323+ 0.22 EUR
341+ 0.21 EUR
Mindestbestellmenge: 177
DMC3400SDW-7 DMC3400SDW-7.pdf
DMC3400SDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SOT363
Kind of channel: enhanced
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
On-state resistance: 0.4/0.9Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.39W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1580 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
725+ 0.099 EUR
820+ 0.087 EUR
895+ 0.08 EUR
945+ 0.076 EUR
3000+ 0.073 EUR
Mindestbestellmenge: 295
DMC4015SSD-13 DMC4015SSD-13.pdf
DMC4015SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.7W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 9.5/-12.2A
On-state resistance: 0.015/0.029Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1873 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
97+ 0.74 EUR
109+ 0.66 EUR
118+ 0.61 EUR
125+ 0.58 EUR
500+ 0.55 EUR
Mindestbestellmenge: 65
DMC4028SSD-13 DMC4028SSD-13.pdf
DMC4028SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4029SSD-13 DMC4029SSD-13.pdf
DMC4029SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
On-state resistance: 0.024/0.045Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4040SSD-13 DMC4040SSD-13.pdf
DMC4040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
111+ 0.65 EUR
137+ 0.52 EUR
152+ 0.47 EUR
161+ 0.44 EUR
Mindestbestellmenge: 64
DMC4040SSDQ-13 DMC4040SSDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4047LSD-13 DMC4047LSD-13.pdf
DMC4047LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.3/-6.3A
On-state resistance: 0.024/0.04Ω
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC4050SSDQ-13 DMC4050SSDQ_Web.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMC6040SSD-13 DMC6040SSD-13.pdf
DMC6040SSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
Power dissipation: 1.56W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.04/0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2292 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
202+ 0.35 EUR
213+ 0.34 EUR
2500+ 0.32 EUR
Mindestbestellmenge: 91
DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5.6/-3.6A
Power dissipation: 1.24W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMC67D8UFDBQ-7 DMC67D8UFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Gate charge: 736.6pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 3A
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1012T-7 DMG1012T-DTE.pdf
DMG1012T-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
590+0.12 EUR
1100+ 0.065 EUR
1140+ 0.063 EUR
Mindestbestellmenge: 590
DMG1012TQ-7 DMG1012T-DTE.pdf
DMG1012TQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20V
Drain current: 0.45A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 10 Stücke
auf Bestellung 310 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
310+0.23 EUR
340+ 0.21 EUR
930+ 0.077 EUR
Mindestbestellmenge: 310
DMG1012UW-7 DMG1012UW-dte.pdf
DMG1012UW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1030 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.11 EUR
1030+ 0.07 EUR
12000+ 0.044 EUR
Mindestbestellmenge: 650
DMG1012UWQ-7 DMG1012UWQ.pdf
DMG1012UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 6A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2690 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
710+0.1 EUR
790+ 0.091 EUR
1030+ 0.07 EUR
1080+ 0.066 EUR
Mindestbestellmenge: 710
DMG1013T-7 ds31784.pdf
DMG1013T-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.27W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3080 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
371+ 0.19 EUR
575+ 0.12 EUR
695+ 0.1 EUR
1558+ 0.046 EUR
1645+ 0.043 EUR
24000+ 0.042 EUR
Mindestbestellmenge: 250
DMG1013TQ-7 DMG1013TQ.pdf
DMG1013TQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -330mA
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Power dissipation: 0.27W
Polarisation: unipolar
Gate charge: 580pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -6A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG1013UW-7 DMG1013UW.pdf
DMG1013UW-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 32855 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.25 EUR
965+ 0.074 EUR
1215+ 0.059 EUR
1310+ 0.055 EUR
1355+ 0.053 EUR
1385+ 0.052 EUR
3000+ 0.05 EUR
Mindestbestellmenge: 295
DMG1013UWQ-13 DMG1013UWQ.pdf
DMG1013UWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Gate charge: 622.4pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -3A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1013UWQ-7 DMG1013UWQ.pdf
DMG1013UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.54A; 0.31W; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -540mA
On-state resistance: 1.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.31W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5340 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
330+0.22 EUR
740+ 0.097 EUR
820+ 0.087 EUR
1030+ 0.07 EUR
1085+ 0.066 EUR
Mindestbestellmenge: 330
DMG1016UDW-7 DMG1016UDW-7.pdf
DMG1016UDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.53W
On-state resistance: 0.45/0.75Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Gate-source voltage: ±6V
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Drain current: 0.85/-1.07A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
260+0.27 EUR
545+ 0.13 EUR
Mindestbestellmenge: 260
DMG1016UDWQ-7 DMG1016UDWQ_Rev1.3_Jan2022.pdf
DMG1016UDWQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A
Type of transistor: N/P-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.33W
On-state resistance: 0.45Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±6V
Pulsed drain current: 3.2A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Drain current: 0.69/-0.548A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG1016V-7 ds31767.pdf
DMG1016V-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Drain current: 0.63/-0.46A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2674 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
510+ 0.14 EUR
575+ 0.12 EUR
635+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 325
DMG1016VQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.63/-0.46A
On-state resistance: 700mΩ/1.3Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 736.6/622.4pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG1016VQ-7 DMG1016VQ-7.pdf
DMG1016VQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.087/-0.064A
On-state resistance: 0.4/0.7Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1023UV-7 DMG1023UV.pdf
DMG1023UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
278+ 0.26 EUR
435+ 0.16 EUR
635+ 0.11 EUR
Mindestbestellmenge: 209
DMG1023UVQ-7 DMG1023UVQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 622pC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -3A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG1024UV-7 DMG1024UV-DTE.pdf
DMG1024UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563
Mounting: SMD
Drain current: 0.89A
Drain-source voltage: 20V
Power dissipation: 0.53W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Type of transistor: N-MOSFET x2
Case: SOT563
Anzahl je Verpackung: 10 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
410+ 0.17 EUR
510+ 0.14 EUR
540+ 0.13 EUR
Mindestbestellmenge: 370
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.58W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3723 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
430+ 0.17 EUR
485+ 0.15 EUR
560+ 0.13 EUR
595+ 0.12 EUR
Mindestbestellmenge: 305
DMG1026UVQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 2.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Gate charge: 0.45pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1029SV-7 DMG1029SV-7.pdf
DMG1029SV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.66W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG1029SVQ-7 DMG1029SV-7.pdf
DMG1029SVQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.66W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG10N60SCT
DMG10N60SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 15A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2301L-13 DMG2301L.pdf
DMG2301L-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 1.5W; SOT23
Mounting: SMD
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1A
Drain-source voltage: -20V
Gate charge: 5.5nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2301LK-13 DMG2301LK.pdf
DMG2301LK-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 298mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -1.9A
Drain-source voltage: -20V
Gate charge: 3.4nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2301U-7 DMG2301U.pdf
DMG2301U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -27A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
+1
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
715+ 0.1 EUR
795+ 0.09 EUR
1040+ 0.069 EUR
1100+ 0.065 EUR
Mindestbestellmenge: 380
DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2305UX-13 DMG2305UX.pdf
DMG2305UX-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG2305UX-7 DMG2305UX.pdf
DMG2305UX-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -3.3A
Drain-source voltage: -20V
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2620 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
700+0.1 EUR
850+ 0.085 EUR
960+ 0.075 EUR
1090+ 0.066 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 700
DMG2305UXQ-13 DMG2305UXQ.pdf
DMG2305UXQ-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG2305UXQ-7 DMG2305UXQ.pdf
DMG2305UXQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -15A; 1.4W; SOT23
Mounting: SMD
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Drain current: -4A
Drain-source voltage: -20V
Gate charge: 10.2nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG2307L-7 DMG2307L.pdf
DMG2307L-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
270+0.27 EUR
685+ 0.1 EUR
Mindestbestellmenge: 270
DMG2307LQ-7 DMG2307LQ_Rev2.3_Feb2022.pdf
DMG2307LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG301NU-13 DMG301NU.pdf
DMG301NU-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5029 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
305+0.24 EUR
410+ 0.18 EUR
455+ 0.16 EUR
465+ 0.15 EUR
2500+ 0.14 EUR
Mindestbestellmenge: 305
DMG301NU-7 DMG301NU.pdf
DMG301NU-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
475+ 0.15 EUR
535+ 0.13 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 380
DMG302PU-13 DMG302PU.pdf
DMG302PU-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Case: SOT23
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG302PU-7 DMG302PU.pdf
DMG302PU-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.45W
Drain-source voltage: -25V
Drain current: -0.14A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3401LSN-7 DMG3401LSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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