![DMC3028LSD-13 DMC3028LSD-13](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5741/31%7E8SO-3.9%7E%7E8.jpg)
DMC3028LSD-13 Diodes Incorporated
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Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.3 EUR |
5000+ | 0.29 EUR |
12500+ | 0.27 EUR |
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Technische Details DMC3028LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.6A/6.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A, Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMC3028LSD-13 nach Preis ab 0.26 EUR bis 0.92 EUR
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DMC3028LSD-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Polarisation: unipolar On-state resistance: 0.028/0.025Ω Kind of package: reel; tape Drain current: 7.4/-7.1A Drain-source voltage: 30/-30V Case: SO8 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 2.1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 437 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3028LSD-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Polarisation: unipolar On-state resistance: 0.028/0.025Ω Kind of package: reel; tape Drain current: 7.4/-7.1A Drain-source voltage: 30/-30V Case: SO8 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 2.1W |
auf Bestellung 437 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3028LSD-13 | Hersteller : Diodes Zetex |
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auf Bestellung 2849 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3028LSD-13 | Hersteller : Diodes Zetex |
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auf Bestellung 2849 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3028LSD-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 30916 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3028LSD-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 15896 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3028LSD-13 | Hersteller : DIODES/ZETEX |
![]() Anzahl je Verpackung: 25 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3028LSD-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMC3028LSD-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |