DMC3032LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.25 EUR |
| 5000+ | 0.24 EUR |
| 12500+ | 0.22 EUR |
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Technische Details DMC3032LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A, Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V, Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMC3032LSD-13 nach Preis ab 0.21 EUR bis 0.75 EUR
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DMC3032LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Polarisation: unipolar On-state resistance: 0.032/0.039Ω Kind of package: reel; tape Drain current: 7/-8.1A Drain-source voltage: 30/-30V Case: SO8 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 2.5W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2337 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3032LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Polarisation: unipolar On-state resistance: 0.032/0.039Ω Kind of package: reel; tape Drain current: 7/-8.1A Drain-source voltage: 30/-30V Case: SO8 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N/P-MOSFET Mounting: SMD Power dissipation: 2.5W |
auf Bestellung 2337 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3032LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 53579 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3032LSD-13 | Hersteller : Diodes Incorporated |
MOSFET 30V VDSS 20V VGSS 2.5W PD COMP MOSFET |
auf Bestellung 4988 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3032LSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 30V 8.1A/7A 8-Pin SO T/R |
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