![DMG1029SVQ-7 DMG1029SVQ-7](https://static6.arrow.com/aropdfconversion/arrowimages/c0c91399b6ef458370f33d92ea47e607a241997e/sot-563.jpg)
DMG1029SVQ-7 Diodes Zetex
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG1029SVQ-7 Diodes Zetex
Description: MOSFET BVDSS: 41V~60V SOT563 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V, Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMG1029SVQ-7 nach Preis ab 0.18 EUR bis 0.86 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DMG1029SVQ-7 | Hersteller : Diodes Zetex |
![]() |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : Diodes Zetex |
![]() |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
DMG1029SVQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 168000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : Diodes Zetex |
![]() |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : Diodes Incorporated |
![]() |
auf Bestellung 130718 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
DMG1029SVQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 170770 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : Diodes Inc |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
DMG1029SVQ-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60/-60V Drain current: 0.4/-0.28A On-state resistance: 1.7/4Ω Type of transistor: N/P-MOSFET Power dissipation: 0.66W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |