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DMG1012UWQ-7

DMG1012UWQ-7 Diodes Zetex


dmg1012uwq.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 0.95A 3-Pin SOT-323 T/R Automotive AEC-Q101
auf Bestellung 315000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMG1012UWQ-7 Diodes Zetex

Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V, Qualification: AEC-Q101.

Weitere Produktangebote DMG1012UWQ-7 nach Preis ab 0.07 EUR bis 0.55 EUR

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DMG1012UWQ-7 DMG1012UWQ-7 Hersteller : Diodes Incorporated DMG1012UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 315000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
21000+0.09 EUR
30000+0.08 EUR
75000+0.07 EUR
150000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ-7 Hersteller : DIODES INCORPORATED DMG1012UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.61W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: 6A
Case: SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
250+0.29 EUR
345+0.21 EUR
509+0.14 EUR
603+0.12 EUR
1013+0.07 EUR
1071+0.07 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ-7 Hersteller : DIODES INCORPORATED DMG1012UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.61W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1nC
Kind of channel: enhancement
Gate-source voltage: ±6V
Pulsed drain current: 6A
Case: SOT323
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
345+0.21 EUR
509+0.14 EUR
603+0.12 EUR
1013+0.07 EUR
1071+0.07 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ-7 Hersteller : Diodes Incorporated DMG1012UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 317970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
54+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 Hersteller : Diodes Incorporated DMG1012UWQ.pdf MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
auf Bestellung 5896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.46 EUR
10+0.31 EUR
100+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
9000+0.08 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 Hersteller : Diodes Inc dmg1012uwq.pdf MOSFET BVDSS: 8V24V SOT323 T&R 3K
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