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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3402L-7 DMG3402L-7 DIODES INCORPORATED DMG3402L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2665 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
249+ 0.29 EUR
298+ 0.24 EUR
353+ 0.2 EUR
421+ 0.17 EUR
662+ 0.11 EUR
700+ 0.1 EUR
Mindestbestellmenge: 200
DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 11.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 11.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3404L-7 DMG3404L-7 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.33W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2715 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
211+ 0.34 EUR
268+ 0.27 EUR
404+ 0.18 EUR
625+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 162
DMG3406L-13 DMG3406L-13 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3406L-7 DMG3406L-7 DIODES INCORPORATED DMG3406L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3413L-7 DMG3413L-7 DIODES INCORPORATED DMG3413L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3414U-7 DMG3414U-7 DIODES INCORPORATED DMG3414U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
169+0.42 EUR
353+ 0.2 EUR
407+ 0.18 EUR
472+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 169
DMG3414UQ-13 DMG3414UQ-13 DIODES INCORPORATED DMG3414UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 30A
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Gate charge: 9.6nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3414UQ-7 DMG3414UQ-7 DIODES INCORPORATED DMG3414UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3415UFY4Q-7 DIODES INCORPORATED DMG3415UFY4Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Mounting: SMD
Case: X2-DFN2015-3
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -16V
Drain current: -2.2A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.35W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3415UQ-7 DMG3415UQ-7 DIODES INCORPORATED DMG3415U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2085 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
360+ 0.2 EUR
410+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 325
DMG3418L-13 DMG3418L-13 DIODES INCORPORATED DMG3418L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Case: SOT23
Drain-source voltage: 30V
Drain current: 3.1A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 5.5nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3418L-7 DMG3418L-7 DIODES INCORPORATED DMG3418L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3420UQ-7 DMG3420UQ-7 DIODES INCORPORATED DMG3420UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.43A
Pulsed drain current: 20A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3N60SCT DMG3N60SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 3.7A
Power dissipation: 42W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 12.6C
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4407SSS-13 DMG4407SSS-13 DIODES INCORPORATED DMG4407SSS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.82W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4413LSS-13 DMG4413LSS-13 DIODES INCORPORATED ds31754.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG4466SSS-13 DMG4466SSS-13 DIODES INCORPORATED ds32137.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4466SSSL-13 DMG4466SSSL-13 DIODES INCORPORATED ds32244.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG4468LFG-7 DIODES INCORPORATED ds31857.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.83A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.99W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45.9A
Mounting: SMD
Case: U-DFN3030-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG4468LK3-13 DIODES INCORPORATED DMG4468LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4496SSS-13 DMG4496SSS-13 DIODES INCORPORATED ds32048.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4511SK4-13 DMG4511SK4-13 DIODES INCORPORATED DMG4511SK4-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2463 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
137+ 0.52 EUR
152+ 0.47 EUR
158+ 0.45 EUR
163+ 0.44 EUR
167+ 0.43 EUR
500+ 0.41 EUR
Mindestbestellmenge: 65
DMG4800LFG-7 DIODES INCORPORATED ds31785.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.82A
Pulsed drain current: 40A
Power dissipation: 0.94W
Case: U-DFN3030-8
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 9.47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4800LK3-13 DMG4800LK3-13 DIODES INCORPORATED DMG4800LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.71W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4800LSD-13 DMG4800LSD-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 22mΩ
Kind of package: reel; tape
Drain current: 8.4A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3336 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
237+ 0.3 EUR
264+ 0.27 EUR
280+ 0.26 EUR
500+ 0.25 EUR
Mindestbestellmenge: 167
DMG4800LSDQ-13 DMG4800LSDQ-13 DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4822SSD-13 DMG4822SSD-13 DIODES INCORPORATED DMG4822SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4822SSDQ-13 DMG4822SSDQ-13 DIODES INCORPORATED DMG4822SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Application: automotive industry
Power dissipation: 1.42W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 32.5mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG5802LFX-7 DIODES INCORPORATED DMG5802LFX.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 5.2A; Idm: 70A; 980mW
Kind of package: reel; tape
Drain-source voltage: 24V
Drain current: 5.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.98W
Polarisation: unipolar
Gate charge: 31.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: W-DFN5020-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG6301UDW-13 DMG6301UDW-13 DIODES INCORPORATED DMG6301UDW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.37W
On-state resistance: 5Ω
Polarisation: unipolar
Gate charge: 0.36nC
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Kind of channel: enhanced
Drain-source voltage: 25V
Drain current: 0.19A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG6301UDW-7 DMG6301UDW-7 DIODES INCORPORATED DMG6301UDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
On-state resistance: 5Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±8V
Kind of channel: enhanced
Drain-source voltage: 25V
Drain current: 0.22A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG6302UDW-7 DMG6302UDW-7 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.12A
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG6402LDM-7 DMG6402LDM-7 DIODES INCORPORATED DMG6402LDM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG6402LVT-7 DMG6402LVT-7 DIODES INCORPORATED DMG6402LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2730 Stücke:
Lieferzeit 7-14 Tag (e)
300+0.24 EUR
570+ 0.13 EUR
645+ 0.11 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 300
DMG6601LVT-7 DMG6601LVT-7 DIODES INCORPORATED DMG6601LVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
157+0.46 EUR
246+ 0.29 EUR
288+ 0.25 EUR
414+ 0.17 EUR
491+ 0.15 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 157
DMG6602SVT-7 DMG6602SVT-7 DIODES INCORPORATED DMG6602SVT-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
On-state resistance: 0.06/0.095Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.112W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3140 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
230+ 0.31 EUR
272+ 0.26 EUR
391+ 0.18 EUR
451+ 0.16 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 162
DMG6602SVTQ-7 DMG6602SVTQ-7 DIODES INCORPORATED DMG6602SVTQ_Rev1-2_Dec2014.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Mounting: SMD
On-state resistance: 0.06/0.095Ω
Type of transistor: N/P-MOSFET
Application: automotive industry
Power dissipation: 0.84W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1940 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
336+ 0.21 EUR
435+ 0.16 EUR
486+ 0.15 EUR
596+ 0.12 EUR
631+ 0.11 EUR
Mindestbestellmenge: 278
DMG6602SVTX-7 DMG6602SVTX-7 DIODES INCORPORATED DMG6602SVT.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Mounting: SMD
On-state resistance: 100/140mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13/9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG6898LSD-13 DMG6898LSD-13 DIODES INCORPORATED DMG6898LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Polarisation: unipolar
On-state resistance: 23mΩ
Kind of package: reel; tape
Drain current: 7.1A
Drain-source voltage: 20V
Case: SO8
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.28W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG6898LSDQ-13 DMG6898LSDQ-13 DIODES INCORPORATED DMG6898LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 30A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG6968U-7 DMG6968U-7 DIODES INCORPORATED DMG6968U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
490+0.15 EUR
540+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 490
DMG6968UDM-7 DMG6968UDM-7 DIODES INCORPORATED DMG6968UDM.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
332+ 0.22 EUR
353+ 0.2 EUR
Mindestbestellmenge: 132
DMG6968UQ-7 DMG6968UQ-7 DIODES INCORPORATED DMG6968U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7401SFG-13 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG7401SFG-7 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7430LFG-7 DMG7430LFG-7 DIODES INCORPORATED DMG7430LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 9.2A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)
245+0.3 EUR
325+ 0.22 EUR
405+ 0.18 EUR
430+ 0.17 EUR
Mindestbestellmenge: 245
DMG7430LFGQ-13 DIODES INCORPORATED DMG7430LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG7430LFGQ-7 DIODES INCORPORATED DMG7430LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG8601UFG-7 DIODES INCORPORATED ds31788.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Mounting: SMD
Power dissipation: 920mW
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 27A
Case: U-DFN3030-8
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG8822UTS-13 DIODES INCORPORATED ds31798.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9926UDM-7 DMG9926UDM-7 DIODES INCORPORATED ds31770.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9926USD-13 DMG9926USD-13 DIODES INCORPORATED ds31757.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9933USD-13 DMG9933USD-13 DIODES INCORPORATED DMG9933USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Polarisation: unipolar
On-state resistance: 0.11Ω
Kind of package: reel; tape
Drain current: -3A
Drain-source voltage: -20V
Case: SO8
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.15W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMGD7N45SSD-13 DIODES INCORPORATED DMGD7N45SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMG3401LSNQ-7 DMG3401LSNQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 25.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2665 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
249+ 0.29 EUR
298+ 0.24 EUR
353+ 0.2 EUR
421+ 0.17 EUR
662+ 0.11 EUR
700+ 0.1 EUR
Mindestbestellmenge: 200
DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 11.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 11.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 13.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.33W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2715 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
211+ 0.34 EUR
268+ 0.27 EUR
404+ 0.18 EUR
625+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 162
DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3407SSN-7 DMG3407SSN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3413L-7 DMG3413L.pdf
DMG3413L-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3414U-7 DMG3414U.pdf
DMG3414U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
169+0.42 EUR
353+ 0.2 EUR
407+ 0.18 EUR
472+ 0.15 EUR
500+ 0.14 EUR
Mindestbestellmenge: 169
DMG3414UQ-13 DMG3414UQ.pdf
DMG3414UQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 30A
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Polarisation: unipolar
Gate charge: 9.6nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.78W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3415UFY4Q-7 DMG3415UFY4Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W
Mounting: SMD
Case: X2-DFN2015-3
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -16V
Drain current: -2.2A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.35W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG3415UQ-7 DMG3415U.pdf
DMG3415UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2085 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
360+ 0.2 EUR
410+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 325
DMG3418L-13 DMG3418L.pdf
DMG3418L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Case: SOT23
Drain-source voltage: 30V
Drain current: 3.1A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 5.5nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG3418L-7 DMG3418L.pdf
DMG3418L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3420UQ-7 DMG3420UQ.pdf
DMG3420UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.43A
Pulsed drain current: 20A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG3N60SCT
DMG3N60SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 3.7A; 42W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 3.7A
Power dissipation: 42W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 12.6C
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4407SSS-13 DMG4407SSS.pdf
DMG4407SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -10A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.82W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4413LSS-13 ds31754.pdf
DMG4413LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -45A; 1.4W; SO8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 10.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG4466SSS-13 ds32137.pdf
DMG4466SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4466SSSL-13 ds32244.pdf
DMG4466SSSL-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.42W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG4468LFG-7 ds31857.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.83A; Idm: 45.9A; 990mW
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.83A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.99W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 45.9A
Mounting: SMD
Case: U-DFN3030-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG4468LK3-13 DMG4468LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4496SSS-13 ds32048.pdf
DMG4496SSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4511SK4-13 DMG4511SK4-13.pdf
DMG4511SK4-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
On-state resistance: 0.035/0.045Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.54W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO252-4
Semiconductor structure: common drain
Drain-source voltage: 35/-35V
Drain current: 7.8/-8.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2463 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
137+ 0.52 EUR
152+ 0.47 EUR
158+ 0.45 EUR
163+ 0.44 EUR
167+ 0.43 EUR
500+ 0.41 EUR
Mindestbestellmenge: 65
DMG4800LFG-7 ds31785.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.82A; Idm: 40A; 940mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.82A
Pulsed drain current: 40A
Power dissipation: 0.94W
Case: U-DFN3030-8
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 9.47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4800LK3-13 DMG4800LK3.pdf
DMG4800LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; 1.71W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 1.71W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4800LSD-13 DMG4800LSD.pdf
DMG4800LSD-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Polarisation: unipolar
On-state resistance: 22mΩ
Kind of package: reel; tape
Drain current: 8.4A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 1.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3336 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
237+ 0.3 EUR
264+ 0.27 EUR
280+ 0.26 EUR
500+ 0.25 EUR
Mindestbestellmenge: 167
DMG4800LSDQ-13 DMG4800LSD.pdf
DMG4800LSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4822SSD-13 DMG4822SSD.pdf
DMG4822SSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4822SSDQ-13 DMG4822SSDQ.pdf
DMG4822SSDQ-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Application: automotive industry
Power dissipation: 1.42W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6.6A
On-state resistance: 32.5mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG5802LFX-7 DMG5802LFX.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 5.2A; Idm: 70A; 980mW
Kind of package: reel; tape
Drain-source voltage: 24V
Drain current: 5.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.98W
Polarisation: unipolar
Gate charge: 31.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 70A
Mounting: SMD
Case: W-DFN5020-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG6301UDW-13 DMG6301UDW.pdf
DMG6301UDW-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363
Type of transistor: N-MOSFET
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.37W
On-state resistance: 5Ω
Polarisation: unipolar
Gate charge: 0.36nC
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Kind of channel: enhanced
Drain-source voltage: 25V
Drain current: 0.19A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMG6301UDW-7 DMG6301UDW.pdf
DMG6301UDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
On-state resistance: 5Ω
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate-source voltage: ±8V
Kind of channel: enhanced
Drain-source voltage: 25V
Drain current: 0.22A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG6302UDW-7
DMG6302UDW-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.12A
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG6402LDM-7 DMG6402LDM.pdf
DMG6402LDM-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26
On-state resistance: 40mΩ
Mounting: SMD
Case: SOT26
Drain-source voltage: 30V
Drain current: 4.2A
Type of transistor: N-MOSFET
Power dissipation: 1.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 31A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG6402LVT-7 DMG6402LVT.pdf
DMG6402LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; TSOT26
On-state resistance: 42mΩ
Mounting: SMD
Case: TSOT26
Drain-source voltage: 30V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2730 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
570+ 0.13 EUR
645+ 0.11 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 300
DMG6601LVT-7 DMG6601LVT-7.pdf
DMG6601LVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3/-2A
Power dissipation: 0.54W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 0.065/0.142Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
157+0.46 EUR
246+ 0.29 EUR
288+ 0.25 EUR
414+ 0.17 EUR
491+ 0.15 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 157
DMG6602SVT-7 DMG6602SVT-7.pdf
DMG6602SVT-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
On-state resistance: 0.06/0.095Ω
Type of transistor: N/P-MOSFET
Power dissipation: 1.112W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
230+ 0.31 EUR
272+ 0.26 EUR
391+ 0.18 EUR
451+ 0.16 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 162
DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Mounting: SMD
On-state resistance: 0.06/0.095Ω
Type of transistor: N/P-MOSFET
Application: automotive industry
Power dissipation: 0.84W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
336+ 0.21 EUR
435+ 0.16 EUR
486+ 0.15 EUR
596+ 0.12 EUR
631+ 0.11 EUR
Mindestbestellmenge: 278
DMG6602SVTX-7 DMG6602SVT.pdf
DMG6602SVTX-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Mounting: SMD
On-state resistance: 100/140mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13/9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25...-20A
Case: TSOT26
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG6898LSD-13 DMG6898LSD.pdf
DMG6898LSD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Polarisation: unipolar
On-state resistance: 23mΩ
Kind of package: reel; tape
Drain current: 7.1A
Drain-source voltage: 20V
Case: SO8
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.28W
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG6898LSDQ-13 DMG6898LSD.pdf
DMG6898LSDQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 30A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMG6968U-7 DMG6968U.pdf
DMG6968U-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
490+0.15 EUR
540+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 490
DMG6968UDM-7 DMG6968UDM.pdf
DMG6968UDM-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
332+ 0.22 EUR
353+ 0.2 EUR
Mindestbestellmenge: 132
DMG6968UQ-7 DMG6968U.pdf
DMG6968UQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7401SFG-13 DMG7401SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG7401SFG-7 DMG7401SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -10.8A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 58nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7408SFG-7 DMG7408SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG7430LFG-7 DMG7430LFG.pdf
DMG7430LFG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Drain-source voltage: 30V
Drain current: 9.2A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
245+0.3 EUR
325+ 0.22 EUR
405+ 0.18 EUR
430+ 0.17 EUR
Mindestbestellmenge: 245
DMG7430LFGQ-13 DMG7430LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMG7430LFGQ-7 DMG7430LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 3.5W
Mounting: SMD
Case: PowerDI3333-8
Pulsed drain current: 90A
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG8601UFG-7 ds31788.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Mounting: SMD
Power dissipation: 920mW
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 27A
Case: U-DFN3030-8
Drain-source voltage: 20V
Drain current: 5.2A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG8822UTS-13 ds31798.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9926UDM-7 ds31770.pdf
DMG9926UDM-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9926USD-13 ds31757.pdf
DMG9926USD-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Polarisation: unipolar
On-state resistance: 0.11Ω
Kind of package: reel; tape
Drain current: -3A
Drain-source voltage: -20V
Case: SO8
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Type of transistor: P-MOSFET
Mounting: SMD
Power dissipation: 1.15W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMGD7N45SSD-13 DMGD7N45SSD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
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