DMG6898LSDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.55 EUR |
| 5000+ | 0.52 EUR |
| 12500+ | 0.48 EUR |
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Technische Details DMG6898LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMG6898LSDQ-13 nach Preis ab 0.5 EUR bis 1.46 EUR
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DMG6898LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.28W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 24984 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6898LSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss |
auf Bestellung 17238 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6898LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 30A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMG6898LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 30A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |