DMGD7N45SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 450V 0.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.64W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.04 EUR |
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Technische Details DMGD7N45SSD-13 Diodes Incorporated
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 500mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 450V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 500mA, Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm, Verlustleistung, p-Kanal: 1.64W, Drain-Source-Spannung Vds, n-Kanal: 450V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TUK SGACK902S Keystone Coupler, Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.64W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMGD7N45SSD-13 nach Preis ab 1.11 EUR bis 2.6 EUR
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DMGD7N45SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 450V 0.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.64W Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 3231 Stücke: Lieferzeit 10-14 Tag (e) |
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DMGD7N45SSD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 251V-500V |
auf Bestellung 2334 Stücke: Lieferzeit 10-14 Tag (e) |
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DMGD7N45SSD-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 450V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm Verlustleistung, p-Kanal: 1.64W Drain-Source-Spannung Vds, n-Kanal: 450V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.64W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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DMGD7N45SSD-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 450V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm Verlustleistung, p-Kanal: 1.64W Drain-Source-Spannung Vds, n-Kanal: 450V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.64W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMGD7N45SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 850mA Pulsed drain current: 2.2A Power dissipation: 1.64W Case: SO8 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMGD7N45SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 850mA Pulsed drain current: 2.2A Power dissipation: 1.64W Case: SO8 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |