DMG5802LFX-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 24V 6.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: W-DFN5020-6
auf Bestellung 279000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.35 EUR |
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Technische Details DMG5802LFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 980mW, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: W-DFN5020-6.
Weitere Produktangebote DMG5802LFX-7 nach Preis ab 0.36 EUR bis 1.06 EUR
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DMG5802LFX-7 | Hersteller : Diodes Incorporated |
MOSFET Dual N-Ch 24V Mosfet 0.98W PD |
auf Bestellung 2981 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG5802LFX-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 6.5A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: W-DFN5020-6 |
auf Bestellung 281929 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG5802LFX-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 5.2A; Idm: 70A; 980mW Kind of package: reel; tape Drain-source voltage: 24V Drain current: 5.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 0.98W Polarisation: unipolar Gate charge: 31.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: W-DFN5020-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMG5802LFX-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 5.2A; Idm: 70A; 980mW Kind of package: reel; tape Drain-source voltage: 24V Drain current: 5.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 0.98W Polarisation: unipolar Gate charge: 31.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD Case: W-DFN5020-6 |
Produkt ist nicht verfügbar |