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DMG6301UDW-13 Diodes Incorporated
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Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.1 EUR |
30000+ | 0.098 EUR |
50000+ | 0.082 EUR |
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Technische Details DMG6301UDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 240mA, Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote DMG6301UDW-13 nach Preis ab 0.12 EUR bis 0.67 EUR
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DMG6301UDW-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 330000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6301UDW-13 | Hersteller : Diodes Inc |
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auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6301UDW-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363 Type of transistor: N-MOSFET Case: SOT363 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.37W On-state resistance: 5Ω Polarisation: unipolar Gate charge: 0.36nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 25V Drain current: 0.19A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG6301UDW-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMG6301UDW-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 190mA; Idm: 1.5A; 370mW; SOT363 Type of transistor: N-MOSFET Case: SOT363 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.37W On-state resistance: 5Ω Polarisation: unipolar Gate charge: 0.36nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 25V Drain current: 0.19A |
Produkt ist nicht verfügbar |