DMG6602SVTQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1065000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 30000+ | 0.13 EUR |
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Technische Details DMG6602SVTQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.
Weitere Produktangebote DMG6602SVTQ-7 nach Preis ab 0.11 EUR bis 0.6 EUR
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DMG6602SVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Mounting: SMD On-state resistance: 0.06/0.095Ω Type of transistor: N/P-MOSFET Application: automotive industry Power dissipation: 0.84W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25...-20A Case: TSOT26 Drain-source voltage: 30/-30V Drain current: 2.7/-2.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1940 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6602SVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Mounting: SMD On-state resistance: 0.06/0.095Ω Type of transistor: N/P-MOSFET Application: automotive industry Power dissipation: 0.84W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25...-20A Case: TSOT26 Drain-source voltage: 30/-30V Drain current: 2.7/-2.4A |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6602SVTQ-7 | Hersteller : Diodes Incorporated |
MOSFET 30V Vds 20V Vgs Complmtry Enh FET |
auf Bestellung 453313 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6602SVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 1071983 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6602SVTQ-7 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-26 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |