auf Bestellung 27500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.25 EUR |
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Technische Details DMG4800LK3-13 Diodes Zetex
Description: MOSFET N-CH 30V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Power Dissipation (Max): 1.71W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V.
Weitere Produktangebote DMG4800LK3-13 nach Preis ab 0.26 EUR bis 1 EUR
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DMG4800LK3-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 10A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LK3-13 | Hersteller : Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A |
auf Bestellung 10967 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
auf Bestellung 52455 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMG4800LK3-13 | Hersteller : DIODES INCORPORATED |
DMG4800LK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |