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DMMT3904W-13-F DMMT3904W-13-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMMT3904W-7-F DMMT3904W-7-F DIODES INCORPORATED DMMT3904W.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3365 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
235+ 0.3 EUR
334+ 0.21 EUR
388+ 0.18 EUR
653+ 0.11 EUR
691+ 0.1 EUR
Mindestbestellmenge: 179
DMMT3904WQ-7-F DMMT3904WQ-7-F DIODES INCORPORATED DMMT3904WQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED DMMT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT5401-7-F DMMT5401-7-F DIODES INCORPORATED DMMT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Power dissipation: 0.3W
Collector-emitter voltage: 150V
Current gain: 30...250
Collector current: 0.2A
Type of transistor: PNP x2
Polarisation: bipolar
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4273 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
231+ 0.31 EUR
348+ 0.21 EUR
363+ 0.2 EUR
414+ 0.17 EUR
579+ 0.12 EUR
Mindestbestellmenge: 167
DMMT5551-7-F DMMT5551-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 821 Stücke:
Lieferzeit 7-14 Tag (e)
157+0.46 EUR
205+ 0.35 EUR
261+ 0.27 EUR
321+ 0.22 EUR
397+ 0.18 EUR
571+ 0.13 EUR
603+ 0.12 EUR
Mindestbestellmenge: 157
DMMT5551S-7-F DMMT5551S-7-F DIODES INCORPORATED DMMT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1001UCA10-7 DIODES INCORPORATED DMN1001UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 90A
Case: X2-TSN1820-10
Drain-source voltage: 12V
Drain current: 16A
On-state resistance: 6.9mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1004UFDF-7 DIODES INCORPORATED DMN1004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 12A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1004UFV-13 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 50A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1004UFV-7 DMN1004UFV-7 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1104 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
161+ 0.45 EUR
243+ 0.3 EUR
257+ 0.28 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 125
DMN1006UCA6-7 DIODES INCORPORATED DMN1006UCA6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 13.2A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 35.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: X3-DSN2718-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1008UFDF-13 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1008UFDF-7 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1008UFDFQ-13 DIODES INCORPORATED DMN1008UFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UFDE-7 DIODES INCORPORATED DMN1019UFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1019USN-13 DIODES INCORPORATED DMN1019USN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-13 DMN1019UVT-13 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-7 DMN1019UVT-7 DIODES INCORPORATED DMN1019UVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1025UFDB-7 DMN1025UFDB-7 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2560 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
400+ 0.18 EUR
450+ 0.16 EUR
515+ 0.14 EUR
540+ 0.13 EUR
Mindestbestellmenge: 315
DMN1029UFDB-13 DIODES INCORPORATED DMN1029UFDB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1029UFDB-7 DIODES INCORPORATED DMN1029UFDB.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1045UFR4-7 DIODES INCORPORATED DMN1045UFR4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1054UCB4-7 DIODES INCORPORATED DMN1054UCB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.34W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-13 DIODES INCORPORATED DMN10H099SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-7 DIODES INCORPORATED DMN10H099SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H099SK3-13 DIODES INCORPORATED DMN10H099SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN10H100SK3-13 DIODES INCORPORATED DMN10H100SK3.pdf DMN10H100SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H120SE-13 DMN10H120SE-13 DIODES INCORPORATED DMN10H120SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.4A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-13 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-7 DIODES INCORPORATED DMN10H120SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H170SFDE-7 DIODES INCORPORATED DMN10H170SFDE.pdf DMN10H170SFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-13 DIODES INCORPORATED DMN10H170SFG.pdf DMN10H170SFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-7 DIODES INCORPORATED DMN10H170SFG.pdf DMN10H170SFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3-13 DIODES INCORPORATED DMN10H170SK3.pdf DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3Q-13 DIODES INCORPORATED DMN10H170SK3Q2.pdf DMN10H170SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-13 DIODES INCORPORATED DMN10H170SVT.pdf DMN10H170SVT-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-7 DIODES INCORPORATED DMN10H170SVT.pdf DMN10H170SVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVTQ-7 DIODES INCORPORATED DMN10H170SVTQ.pdf DMN10H170SVTQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN10H220L-7 DMN10H220L-7 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)
334+0.21 EUR
400+ 0.18 EUR
439+ 0.16 EUR
556+ 0.13 EUR
589+ 0.12 EUR
Mindestbestellmenge: 334
DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFVW-7 DIODES INCORPORATED DMN10H220LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LK3-13 DMN10H220LK3-13 DIODES INCORPORATED DMN10H220LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2467 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
347+ 0.21 EUR
367+ 0.2 EUR
2500+ 0.19 EUR
Mindestbestellmenge: 139
DMN10H220LPDW-13 DIODES INCORPORATED DMN10H220LPDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2790 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
247+ 0.29 EUR
309+ 0.23 EUR
463+ 0.15 EUR
676+ 0.11 EUR
715+ 0.1 EUR
1000+ 0.096 EUR
Mindestbestellmenge: 186
DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H700S-13 DIODES INCORPORATED DMN10H700S.pdf DMN10H700S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H700S-7 DIODES INCORPORATED DMN10H700S.pdf DMN10H700S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN1150UFB-7B DIODES INCORPORATED DMN1150UFB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Mounting: SMD
Case: X1-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.3W
Drain-source voltage: 12V
Drain current: 1.15A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 7A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1150UFL3-7 DIODES INCORPORATED DMN1150UFL3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 1.4nC
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1250UFEL-7 DIODES INCORPORATED DMN1250UFEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W
Mounting: SMD
Case: U-QFN1515-12
Kind of package: reel; tape
Power dissipation: 1.25W
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET x8
Polarisation: unipolar
Gate charge: 1.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1260UFA-7B DIODES INCORPORATED DMN1260UFA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Kind of package: reel; tape
Gate charge: 960pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Case: X2-DFN0806-3
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN12M7UCA10-7 DIODES INCORPORATED DMN12M7UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.8A
Pulsed drain current: 80A
Power dissipation: 1.73W
Case: X4-DSN3015-10
Gate-source voltage: ±8V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 35.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DMN13H750S-13 DIODES INCORPORATED DMN13H750S.pdf DMN13H750S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN13H750S-7 DIODES INCORPORATED DMN13H750S.pdf DMN13H750S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN15H310SE-13 DIODES INCORPORATED DMN15H310SE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Pulsed drain current: 10A
Power dissipation: 1.2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMMT3904W-13-F DMMT3904W.pdf
DMMT3904W-13-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMMT3904W-7-F DMMT3904W.pdf
DMMT3904W-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 30...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.2W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3365 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
235+ 0.3 EUR
334+ 0.21 EUR
388+ 0.18 EUR
653+ 0.11 EUR
691+ 0.1 EUR
Mindestbestellmenge: 179
DMMT3904WQ-7-F DMMT3904WQ.pdf
DMMT3904WQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906-7-F DMMT3906.pdf
DMMT3906-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906W-7-f DMMT3906W.pdf
DMMT3906W-7-f
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT3906WQ-7-F DMMT3906W.pdf
DMMT3906WQ-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMMT5401-7-F DMMT5401.pdf
DMMT5401-7-F
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 300mW; SOT26
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Power dissipation: 0.3W
Collector-emitter voltage: 150V
Current gain: 30...250
Collector current: 0.2A
Type of transistor: PNP x2
Polarisation: bipolar
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4273 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
231+ 0.31 EUR
348+ 0.21 EUR
363+ 0.2 EUR
414+ 0.17 EUR
579+ 0.12 EUR
Mindestbestellmenge: 167
DMMT5551-7-F DMMT5551.pdf
DMMT5551-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 821 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
157+0.46 EUR
205+ 0.35 EUR
261+ 0.27 EUR
321+ 0.22 EUR
397+ 0.18 EUR
571+ 0.13 EUR
603+ 0.12 EUR
Mindestbestellmenge: 157
DMMT5551S-7-F DMMT5551.pdf
DMMT5551S-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Power dissipation: 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SOT26
Frequency: 100...300MHz
Collector-emitter voltage: 160V
Current gain: 50...250
Collector current: 0.2A
Type of transistor: NPN x2
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1001UCA10-7 DMN1001UCA10.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 90A
Case: X2-TSN1820-10
Drain-source voltage: 12V
Drain current: 16A
On-state resistance: 6.9mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1004UFDF-7 DMN1004UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 12A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 70A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1004UFV-13 DMN1004UFV.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 50A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 80A
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1004UFV-7 DMN1004UFV.pdf
DMN1004UFV-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 55A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1104 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
161+ 0.45 EUR
243+ 0.3 EUR
257+ 0.28 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 125
DMN1006UCA6-7 DMN1006UCA6.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Kind of package: reel; tape
Drain-source voltage: 12V
Drain current: 13.2A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 35.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: X3-DSN2718-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1008UFDF-13 DMN1008UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1008UFDF-7 DMN1008UFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1008UFDFQ-13 DMN1008UFDFQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 12V
Drain current: 9.8A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 23.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 60A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UFDE-7 DMN1019UFDE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5A
Power dissipation: 0.69W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1019USN-13 DMN1019USN.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.1A
Pulsed drain current: 70A
Power dissipation: 1.11W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1025UFDB-7
DMN1025UFDB-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 35A
Case: U-DFN2020-6
Drain-source voltage: 12V
Drain current: 5.5A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 23.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2560 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
400+ 0.18 EUR
450+ 0.16 EUR
515+ 0.14 EUR
540+ 0.13 EUR
Mindestbestellmenge: 315
DMN1029UFDB-13 DMN1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W
Case: U-DFN2020-6
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 5.8A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1029UFDB-7 DMN1029UFDB.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6
Mounting: SMD
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 65mΩ
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN1045UFR4-7 DMN1045UFR4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1054UCB4-7 DMN1054UCB4.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Mounting: SMD
Case: X1-WLB0808-4
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Drain current: 3.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.34W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-13 DMN10H099SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H099SFG-7 DMN10H099SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Power dissipation: 1.18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H099SK3-13 DMN10H099SK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Case: TO252
Power dissipation: 22W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN10H100SK3-13 DMN10H100SK3.pdf
Hersteller: DIODES INCORPORATED
DMN10H100SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H120SE-13 DMN10H120SE.pdf
DMN10H120SE-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.4A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-13 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN10H120SFG-7 DMN10H120SFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Power dissipation: 1.5W
Polarisation: unipolar
Gate charge: 10.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Drain-source voltage: 100V
Drain current: 4.2A
On-state resistance: 0.122Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H170SFDE-7 DMN10H170SFDE.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFDE-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-13 DMN10H170SFG.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SFG-7 DMN10H170SFG.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SFG-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3-13 DMN10H170SK3.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SK3Q-13 DMN10H170SK3Q2.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-13 DMN10H170SVT.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVT-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVT-7 DMN10H170SVT.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVT-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H170SVTQ-7 DMN10H170SVTQ.pdf
Hersteller: DIODES INCORPORATED
DMN10H170SVTQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN10H220L-7 DMN10H220L.pdf
DMN10H220L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1932 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
334+0.21 EUR
400+ 0.18 EUR
439+ 0.16 EUR
556+ 0.13 EUR
589+ 0.12 EUR
Mindestbestellmenge: 334
DMN10H220LE-13 DMN10H220LE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFDF-7 DMN10H220LFDF.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LFVW-7 DMN10H220LFVW.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LK3-13 DMN10H220LK3.pdf
DMN10H220LK3-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.7A
Pulsed drain current: 30A
Power dissipation: 7.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2467 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
347+ 0.21 EUR
367+ 0.2 EUR
2500+ 0.19 EUR
Mindestbestellmenge: 139
DMN10H220LPDW-13 DMN10H220LPDW.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2790 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
247+ 0.29 EUR
309+ 0.23 EUR
463+ 0.15 EUR
676+ 0.11 EUR
715+ 0.1 EUR
1000+ 0.096 EUR
Mindestbestellmenge: 186
DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN10H700S-13 DMN10H700S.pdf
Hersteller: DIODES INCORPORATED
DMN10H700S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN10H700S-7 DMN10H700S.pdf
Hersteller: DIODES INCORPORATED
DMN10H700S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN1150UFB-7B DMN1150UFB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Mounting: SMD
Case: X1-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.3W
Drain-source voltage: 12V
Drain current: 1.15A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 7A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN1150UFL3-7 DMN1150UFL3.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±6V
Mounting: SMD
Case: X2-DFN1310-6
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 1.4nC
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN1250UFEL-7 DMN1250UFEL.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W
Mounting: SMD
Case: U-QFN1515-12
Kind of package: reel; tape
Power dissipation: 1.25W
Drain-source voltage: 12V
Drain current: 1.6A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET x8
Polarisation: unipolar
Gate charge: 1.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMN1260UFA-7B DMN1260UFA.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW
Mounting: SMD
Kind of package: reel; tape
Gate charge: 960pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 1.5A
Case: X2-DFN0806-3
Drain-source voltage: 12V
Drain current: 0.5A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN12M7UCA10-7 DMN12M7UCA10.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10.8A
Pulsed drain current: 80A
Power dissipation: 1.73W
Case: X4-DSN3015-10
Gate-source voltage: ±8V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 35.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
DMN13H750S-13 DMN13H750S.pdf
Hersteller: DIODES INCORPORATED
DMN13H750S-13 SMD N channel transistors
Produkt ist nicht verfügbar
DMN13H750S-7 DMN13H750S.pdf
Hersteller: DIODES INCORPORATED
DMN13H750S-7 SMD N channel transistors
Produkt ist nicht verfügbar
DMN15H310SE-13 DMN15H310SE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Pulsed drain current: 10A
Power dissipation: 1.2W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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