Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75528) > Seite 1130 nach 1259
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DMP2110U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2110UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -15A Power dissipation: 0.74W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2110UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -15A Power dissipation: 0.65W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2120U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2120U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23 Kind of package: reel; tape Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 62mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2123L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2123LQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2123LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Pulsed drain current: -15A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 123mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2130L-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2330 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2130LDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP213DUFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -125mA Pulsed drain current: -0.5A Power dissipation: 0.36W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UFDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UFDBQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2160UWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.2A Pulsed drain current: -10A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2165UW-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.7W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2165UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -15A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2170U-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2170U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UFB-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UFD-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -820mA Pulsed drain current: -4A Power dissipation: 490mW Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D0UT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -650mA Pulsed drain current: -5A Power dissipation: 0.33W Case: SOT523 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP21D2UFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.26A Pulsed drain current: -1.5A Power dissipation: 0.36W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP21D5UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; Idm: -2A; 0.46W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.6A Pulsed drain current: -2A Power dissipation: 0.46W Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.97Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP21D6UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -810mA; Idm: -5A; 980mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -810mA Pulsed drain current: -5A Power dissipation: 0.98W Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP21D6UFD-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 0.4W; X1-DFN1212-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.25A Power dissipation: 0.4W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2200UDW-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363 Case: SOT363 Mounting: SMD Drain-source voltage: -20V Drain current: -0.7A On-state resistance: 1Ω Type of transistor: P-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2200UFCL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W Mounting: SMD Case: U-DFN1616-6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -1.2A On-state resistance: 0.65Ω Type of transistor: P-MOSFET Power dissipation: 1.58W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2225LQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.225Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2240UDM-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.6W Case: SOT26 Gate-source voltage: ±12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6972 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2240UW-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Pulsed drain current: -5A Power dissipation: 0.25W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2240UWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Pulsed drain current: -5A Power dissipation: 0.25W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP22D4UFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.8A; 400mW Power dissipation: 0.4W Case: X2-DFN0806-3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -310mA On-state resistance: 5Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP22D5UDJ-7A | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -290mA Pulsed drain current: -1.1A Power dissipation: 0.38W Case: SOT963 Gate-source voltage: ±8V On-state resistance: 5Ω Mounting: SMD Gate charge: 300pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP22D6UT-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP22M2UPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 2.3W Mounting: SMD Type of transistor: P-MOSFET Drain current: -33.5A Drain-source voltage: -20V Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 476nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -100A On-state resistance: 5mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP2305U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -4.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 916 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2305UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Application: automotive industry Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2305UVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.98A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.64W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP25H18DLFDE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP25H18DLFDE-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W Mounting: SMD Kind of package: reel; tape Drain-source voltage: -250V Drain current: -0.21A On-state resistance: 18Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.8nC Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: -1A Case: U-DFN2020-6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP26M1UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -110A Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP26M1UFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -110A Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP26M7UFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 9mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
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DMP26M7UFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 9mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP2900UV-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2900UV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP3004SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8 Mounting: SMD Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 156nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -110A Case: SO8 Drain-source voltage: -30V Drain current: -18.7A On-state resistance: 6.5mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3007LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -15A; Idm: -250A; 3W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 3W Drain-source voltage: -30V Drain current: -15A On-state resistance: 10mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -250A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3007LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; Idm: -120A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Power dissipation: 2.1W Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 12mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 64.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -120A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3007SCG-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP3007SCG-7 | DIODES INCORPORATED |
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DMP3007SCGQ-13 | DIODES INCORPORATED |
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DMP3007SCGQ-7 | DIODES INCORPORATED |
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DMP3007SFG-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP3007SFG-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP3007SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -70A Pulsed drain current: -160A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3007SPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -70A Pulsed drain current: -160A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3008SFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W Drain-source voltage: -30V Drain current: -9.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP3008SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W Drain-source voltage: -30V Drain current: -9.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
DMP2110U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2110UVT-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -15A
Power dissipation: 0.74W
Case: TSOT26
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2110UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -15A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; Idm: -15A; 650mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -15A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2120U-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2120U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Kind of package: reel; tape
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 0.8W; SOT23
Kind of package: reel; tape
Power dissipation: 0.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.39 EUR |
100+ | 0.72 EUR |
230+ | 0.31 EUR |
620+ | 0.12 EUR |
DMP2123L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2123LQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2123LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Pulsed drain current: -15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2130L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2330 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
305+ | 0.24 EUR |
590+ | 0.12 EUR |
670+ | 0.11 EUR |
785+ | 0.092 EUR |
835+ | 0.086 EUR |
DMP2130LDM-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP213DUFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -125mA
Pulsed drain current: -0.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -125mA
Pulsed drain current: -0.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2160UFDB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2160UFDBQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2160UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -10A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -10A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -10A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2165UW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 700mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2165UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -15A; 0.5W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -15A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
325+ | 0.22 EUR |
530+ | 0.14 EUR |
660+ | 0.11 EUR |
735+ | 0.097 EUR |
3000+ | 0.086 EUR |
DMP2170U-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2170U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D0UFB-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D0UFB-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP21D0UFD-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -820mA
Pulsed drain current: -4A
Power dissipation: 490mW
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -820mA
Pulsed drain current: -4A
Power dissipation: 490mW
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D0UT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -650mA
Pulsed drain current: -5A
Power dissipation: 0.33W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -650mA
Pulsed drain current: -5A
Power dissipation: 0.33W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP21D2UFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.26A
Pulsed drain current: -1.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.26A
Pulsed drain current: -1.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP21D5UFB4-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; Idm: -2A; 0.46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.6A
Pulsed drain current: -2A
Power dissipation: 0.46W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; Idm: -2A; 0.46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.6A
Pulsed drain current: -2A
Power dissipation: 0.46W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP21D6UFB4-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -810mA; Idm: -5A; 980mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -810mA
Pulsed drain current: -5A
Power dissipation: 0.98W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -810mA; Idm: -5A; 980mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -810mA
Pulsed drain current: -5A
Power dissipation: 0.98W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP21D6UFD-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 0.4W; X1-DFN1212-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.25A
Power dissipation: 0.4W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 0.4W; X1-DFN1212-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.25A
Power dissipation: 0.4W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
340+ | 0.21 EUR |
895+ | 0.08 EUR |
1020+ | 0.07 EUR |
1175+ | 0.061 EUR |
1240+ | 0.058 EUR |
DMP2200UDW-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.7A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.7A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2200UFCL-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Mounting: SMD
Case: U-DFN1616-6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.65Ω
Type of transistor: P-MOSFET
Power dissipation: 1.58W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Mounting: SMD
Case: U-DFN1616-6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.2A
On-state resistance: 0.65Ω
Type of transistor: P-MOSFET
Power dissipation: 1.58W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2225LQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2240UDM-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; 0.6W; SOT26
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.6W
Case: SOT26
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6972 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
184+ | 0.39 EUR |
295+ | 0.24 EUR |
313+ | 0.23 EUR |
DMP2240UW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Pulsed drain current: -5A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 0.25W; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Pulsed drain current: -5A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP2240UWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Pulsed drain current: -5A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -5A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Pulsed drain current: -5A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP22D4UFA-7B |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.8A; 400mW
Power dissipation: 0.4W
Case: X2-DFN0806-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 5Ω
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.8A; 400mW
Power dissipation: 0.4W
Case: X2-DFN0806-3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 5Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP22D5UDJ-7A |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -290mA
Pulsed drain current: -1.1A
Power dissipation: 0.38W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 300pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -290mA; Idm: -1.1A; 380mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -290mA
Pulsed drain current: -1.1A
Power dissipation: 0.38W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 300pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP22D6UT-7 |
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Hersteller: DIODES INCORPORATED
DMP22D6UT-7 SMD P channel transistors
DMP22D6UT-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP22M2UPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 2.3W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -33.5A
Drain-source voltage: -20V
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 476nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
On-state resistance: 5mΩ
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 2.3W
Mounting: SMD
Type of transistor: P-MOSFET
Drain current: -33.5A
Drain-source voltage: -20V
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerDI5060-8
Gate charge: 476nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
On-state resistance: 5mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP2305U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.2A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.2A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 916 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
218+ | 0.33 EUR |
266+ | 0.27 EUR |
423+ | 0.17 EUR |
507+ | 0.14 EUR |
898+ | 0.08 EUR |
916+ | 0.079 EUR |
DMP2305UQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 7.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 7.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2305UVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.98A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.64W
Polarisation: unipolar
Gate charge: 7.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.98A
On-state resistance: 113mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.64W
Polarisation: unipolar
Gate charge: 7.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP25H18DLFDE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP25H18DLFDE-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -210mA; Idm: -1A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -250V
Drain current: -0.21A
On-state resistance: 18Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 2.8nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: -1A
Case: U-DFN2020-6
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP26M1UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -110A
Drain-source voltage: -20V
Drain current: -56A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -110A
Drain-source voltage: -20V
Drain current: -56A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP26M1UFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -110A
Drain-source voltage: -20V
Drain current: -56A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: -110A
Drain-source voltage: -20V
Drain current: -56A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMP26M7UFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP26M7UFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMP2900UV-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP2900UV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.68A
Pulsed drain current: -2.5A
Power dissipation: 0.8W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP3004SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 156nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -110A
Case: SO8
Drain-source voltage: -30V
Drain current: -18.7A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8
Mounting: SMD
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 156nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -110A
Case: SO8
Drain-source voltage: -30V
Drain current: -18.7A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3007LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; Idm: -250A; 3W; TO252
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Power dissipation: 3W
Drain-source voltage: -30V
Drain current: -15A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 64.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -250A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; Idm: -250A; 3W; TO252
Mounting: SMD
Kind of package: reel; tape
Case: TO252
Power dissipation: 3W
Drain-source voltage: -30V
Drain current: -15A
On-state resistance: 10mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 64.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -250A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3007LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; Idm: -120A; 2.1W; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Power dissipation: 2.1W
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 64.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -120A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; Idm: -120A; 2.1W; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Power dissipation: 2.1W
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 12mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 64.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -120A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3007SCG-13 |
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Hersteller: DIODES INCORPORATED
DMP3007SCG-13 SMD P channel transistors
DMP3007SCG-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SCG-7 |
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Hersteller: DIODES INCORPORATED
DMP3007SCG-7 SMD P channel transistors
DMP3007SCG-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SCGQ-13 |
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Hersteller: DIODES INCORPORATED
DMP3007SCGQ-13 SMD P channel transistors
DMP3007SCGQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SCGQ-7 |
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Hersteller: DIODES INCORPORATED
DMP3007SCGQ-7 SMD P channel transistors
DMP3007SCGQ-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SFG-13 |
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Hersteller: DIODES INCORPORATED
DMP3007SFG-13 SMD P channel transistors
DMP3007SFG-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SFG-7 |
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Hersteller: DIODES INCORPORATED
DMP3007SFG-7 SMD P channel transistors
DMP3007SFG-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP3007SPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3007SPSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP3008SFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3008SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.3A; Idm: -80A; 2.2W
Drain-source voltage: -30V
Drain current: -9.3A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Case: PowerDI3333-8
Anzahl je Verpackung: 1 Stücke
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